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PDF MXTA44 Data sheet ( Hoja de datos )
| Número de pieza | MXTA44 | |
| Descripción | HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
VCBO
Vebo
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Tj\ = 25°C
Derate above 25°C
PD
Storage Temperature
T stg
•Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 12 x 0.6 mm.
Value
400
500
6.0
300
Max
1.0
8.0
150
125
Unit
V
V
V
mA
Unit
Watt
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-E miner Breakdown Voltaged)
(IC = 1.0 mA, Bl = 0)
Collector-Emitter Breakdown Voltage
dC = 100 mA, VBE = °>
Collector-Base Breakdown Voltage
flC = 100 fiA, Ib = 0)
Emitter-Base Breakdown Voltage
(IE = 10 fiA, Ic = 0)
ON CHARACTERISTICS
DC Current Gain{1)
(IC = 1.0 mA, Vce = 10)
dC = 10 mA, Vqe = 10 >
(IC = 50 mA, Vce = 10)
(ic = 100 mA, Vce = 10)
Collector-Emitter Saturation Voltaged)
(IC = 1.0 mA, Ib = 0.1 mA)
dC = 10 mA, Ib = 1.0 mA)
(IC = 50 mA, Ib = 5.0 mA)
Base-Emitter Saturation Voltage
dC = 10 mA, Ib = 1.0 mA)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 20 V, El = 0, f
1.0 MHz)
Input Capacitance
(VE b = 0.5 V, Cl
0, f = 1.0 MHz)
—Current Gain High Frequency
dC = 10 mA, Vce = 10 V, f = 10 MHz)
(1) Pulse Test: Pulse Width « 300 ps, Duty Cycle « 2.0 %.
MXTA44
CASE 345-01, STYLE 1
SOT-89
HIGH VOLTAGE TRANSISTOR
NPN SILICON
Refer to MPSA44 for graphs.
Symbol
Min
V(BR)CEO
V (BR)CES
v (BR)CB0
V(BR)EBO
500
500
Max
Unit
hFE
v CE(sat)
40
50
45
40
v BE(sat)
C bo
Cjbo
0.4
0.5
0.75
0.75
pF
PF
3-131
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MXTA44.PDF ] | |
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