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PDF MXTA43 Data sheet ( Hoja de datos )
| Número de pieza | MXTA43 | |
| Descripción | HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MXTA42
MXTA43
CASE 345-01, STYLE 1
SOT-89
HIGH VOLTAGE TRANSISTOR
NPN SILICON
Refer to MPSA42 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
vCEO
vCBO
VE BO
'C
MPSA42 MPSA43
300 200
300 200
6.0 6.0
500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
•Total Device Dissipation, Ta = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstg
•Thermal Resistance Junction to Ambient
• R ejA
•Package mounted on 99.5% alumina 10 x 12 x 0.6 mm.
Max
1.0
8.0
150
125
Unit
Watt
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.]
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltaged)
dC = 1.0 mAdc, Bl = 0)
MXTA42
MXTA43
Collector-Base Breakdown Voltage
dC = 100 /lAdc, l£ = 0)
MXTA42
MXTA43
Emitter-Base Breakdown Voltage
(IE = 100 /iAdc, lc = 0)
Collector Cutoff Current
(Vcb = 200 Vdc, Ie = 0)
(Vcb = 160 Vdc, l£ = 0)
MXTA42
MXTA43
Emitter Cutoff Current
(Vbe = 6.0 Vdc, lc = 0)
(Vbe = 4.0 Vdc, lc = 0)
ON CHARACTERISTICSd)
MXTA42
MXTA43
DC Current Gain
OC = 1.0 mAdc, Vce = 10 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)
Both Types
Both Types
dC = 30 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 20 mAdc, Ib = 2.0 mAdc)
Base-Emitter Saturation Voltage
dC = 20 mAdc, Ib = 2.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 10 mAdc, Vqe = 20 Vdc, f = 100 MHz)
Collector-Base Capacitance
(Vcb = 20 Vdc, If = 0, f = 1.0 MHz)
(1) Pulse Test: Pulse Width s 300 ^is. Duty Cycle s 2.0%.
MXTA42
MXTA43
MXTA42
MXTA43
MXTA42
MXTA43
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
!CBO
'EBO
Min
300
200
300
200
6.0
-
-
hFE
VCE(sat)
v BE(sat)
25
40
40
40
-
—
Ccb
Unit
Vdc
-
- Vdc
— Vdc
fiAdc
0.1
0.1
/uAdc
0.1
0.1
-
Vdc
0.5
0.5
0.9 Vdc
MHz
PF
3.0
4.0
3-130
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