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1N1200 の電気的特性と機能

1N1200のメーカーはDigitron Semiconductorsです、この部品の機能は「SILICON POWER RECTIFIER」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N1200
部品説明 SILICON POWER RECTIFIER
メーカ Digitron Semiconductors
ロゴ Digitron Semiconductors ロゴ 




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1N1200 Datasheet, 1N1200 PDF,ピン配置, 機能
1N1199(A,B)-1N1206(A,B)
High-reliability discrete products
and engineering services since 1977
SILICON POWER RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Parameter
Symbol
Peak reverse voltage
Operating & storage
temperature range
VR
TJ, Tstg
Maximum thermal resistance
RθJC
Mounting torque
Weight
Add “R” to part numbers for reverse polarity.
1N1199
50V
1N1200
100V
1N1201
150V
1N1202
200V
1N1203
300V
1N1204
400V
-65 to +200°C
2.5°C/W junction to case
25-30 inch pounds
.16 ounces (5.0 grams) typical
1N1205
500V
1N1206
600V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Value
Average forward current
IF(AV) 12 Amps
Maximum surge current
Maximum I2t for fusing
IFSM 250 Amps
I2t 260 A2s
Maximum peak forward voltage
VFM 1.2 Volts
Maximum peak reverse current
IRM 10 µA
Maximum peak reverse current
IRM 1.0 mA
Maximum recommended operating frequency
10 kHz
Pulse test: pulse width 300µsec. Duty cycle 2%
Test Condition
TC = 170°C, half-sine wave, RθJC = 2.5°C/W
8.3ms, half-sine, TJ = 200°C
IFM = 30A: TJ = 25°C*
VRRM, TJ = 25°C
VRRM, TJ = 150°C*
Rev. 20150317

1 Page





1N1200 pdf, ピン配列
High-reliability discrete products
and engineering services since 1977
1N1199(A,B)-1N1206(A,B)
SILICON POWER RECTIFIER
Rev. 20150317


3Pages





ページ 合計 : 3 ページ
 
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[ 1N1200 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


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