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PDF 1N5834 Data sheet ( Hoja de datos )
| Número de pieza | 1N5834 | |
| Descripción | Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N5832 thru 1N5834R
VRRM = 20 V - 40 V
IF(AV) = 40 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N5832 (R)
1N5833 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
1N5834 (R)
40
28
40
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N5832 (R)
Average forward current (per
pkg)
IF(AV)
Peak forward surge current (per
leg)
IFSM
Maximum instantaneous forward
voltage (per leg)
VF
Maximum instantaneous reverse
current at rated DC blocking
voltage (per leg)
IR
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
Mounting torque
RΘJC
Inch ponds
(in-pb)
TC = 125 °C
tp = 8.3 ms, half sine
IF = 40 A, Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
40
800
0.70
1
10
20
1.45
30
1N5833 (R)
40
800
0.70
1
10
20
1.45
30
1N5834 (R)
40
800
0.70
1
10
20
1.45
30
Unit
V
V
V
°C
°C
Unit
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1N5834.PDF ] | |
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