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1N5832のメーカーはGeneSiCです、この部品の機能は「Silicon Power Schottky Diode」です。 |
部品番号 | 1N5832 |
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部品説明 | Silicon Power Schottky Diode | ||
メーカ | GeneSiC | ||
ロゴ | |||
このページの下部にプレビューと1N5832ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N5832 thru 1N5834R
VRRM = 20 V - 40 V
IF(AV) = 40 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N5832 (R)
1N5833 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
1N5834 (R)
40
28
40
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N5832 (R)
Average forward current (per
pkg)
IF(AV)
Peak forward surge current (per
leg)
IFSM
Maximum instantaneous forward
voltage (per leg)
VF
Maximum instantaneous reverse
current at rated DC blocking
voltage (per leg)
IR
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
Mounting torque
RΘJC
Inch ponds
(in-pb)
TC = 125 °C
tp = 8.3 ms, half sine
IF = 40 A, Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
40
800
0.70
1
10
20
1.45
30
1N5833 (R)
40
800
0.70
1
10
20
1.45
30
1N5834 (R)
40
800
0.70
1
10
20
1.45
30
Unit
V
V
V
°C
°C
Unit
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
1 Page 1N5832 thru 1N5834R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
M
DO- 5 (DO-203AB)
J
K
P
D
G
FE
C
A
B
N
Inches
Millimeters
Min
A
B 0.669
C -----
D -----
E 0.422
F 0.115
G -----
J -----
K 0.236
M -----
N -----
P 0.140
Max Min
1/4 –28 UNF
0.687
17.19
0.794
-----
1.020
-----
0.453
10.72
0.200
2.93
0.460
-----
0.280
-----
----- 6.00
0.589
-----
0.063
-----
0.175
3.56
Max
17.44
20.16
25.91
11.50
5.08
11.68
7.00
-----
14.96
1.60
4.45
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ 1N5832 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1N5830 | 25 Amp Schottky Rectifier | Microsemi Corporation |
1N5830 | 25 Amp Schottky Barrier Rectifier 20 to 35 Volts | Micro Commercial Components |
1N5830 | (1N5829 - 1N5831R) Schottky Power Diode | Naina Semiconductor |
1N5830 | (1N5829 - 1N5831R) Silicon Power Schottky Diode | America Semiconductor |