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Datasheet 1N6095 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6095 | Silicon Power Schottky Diode Silicon Power Schottky Diode
Features • High Surge Capability • Types from 30 V to 40V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N6095 thru 1N6096R
VRRM = 30 V - 40 V IF = 25 A
DO-4 Package
Maximum ratings, |  GeneSiC | diode |
| 2 | 1N6095 | Schottky Rectifier, Diode SCHOTTKY RECTIFIER
PD-2.331 rev. A 12/97
1N6095 1N6096
25 Amp
Major Ratings and Characteristics
Characteristics
IF(AV) Rectangular waveform
VRRM
IFSM @60Hz
VF @80 Apk, TJ= 70°C
1N609. Units
25* A
30/40* 400* 0.86*
V A V
TJ range * JEDEC Registered Values
-65to125* °C
Description/Features
|  International Rectifier | rectifier |
| 3 | 1N6095 | SCHOTTKY BARRIER RECTIFIERS |  Motorola Semiconductors | rectifier |
| 4 | 1N6095 | 25A SCHOTTKY BARRIER RECTIFIERS 1N6095-1N6096
High-reliability discrete products and engineering services since 1977
25A SCHOTTKY BARRIER RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), s |  Digitron Semiconductors | rectifier |
| 5 | 1N6095 | 25 Amp Schottky Rectifier |  Microsemi Corporation | rectifier |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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