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Número de pieza | 1N5831 | |
Descripción | 25A SCHOTTKY BARRIER RECTIFIERS | |
Fabricantes | Digitron Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1N5831 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! 1N5829-1N5831
High-reliability discrete products
and engineering services since 1977
25A SCHOTTKY BARRIER RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Symbol
Parameter
TSTG Storage temperature range
TJ Operating junction temperature range
RθJC Maximum thermal resistance
RθJS Typical thermal resistance
Mounting torque
Weight
Value
-65° to +125°C
-65° to +125°C
1.75°C/W junction to case
0.5°C/W junction to sink
15 inch pounds maximum
6 grams (.02 ounces) typical
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Symbol
Characteristic
1N5829
1N5830
VRWM
Working peak reverse voltage
20V
30V
VRRM Repetitive peak reverse voltage
20V
30V
IF(AV) Average forward current
25A 25A
IFSM Maximum surge current
800A
800A
VFM
Maximum peak forward voltage
.360V
.370V
VFM
Maximum peak forward voltage
.440V
.460V
VFM
Maximum peak forward voltage
.720V
.770V
IRM
Maximum peak reverse current
150mA
150mA
IRM
Maximum peak reverse current
3.0mA
3.0mA
CJ
Typical junction capacitance
1650pF
1650pF
1N5831
40V
40V
25A
800A
.380V
.480V
.820V
150mA
3.0mA
1650pF
Test Condition
TC = 97°C, square wave, RθJC = 1.75°C/W
8.3ms, half sine, TJ = 125°C
IFM = 10A: TJ = 25°C*
IFM = 25A: TJ = 25°C*
IFM = 78.5A: TJ = 25°C*
VRRM, TJ = 100°C
VRRM, TJ = 25°C
TJ = 25°C, VR = 5V, f = 1MHz
Rev. 20150317
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1N5831.PDF ] |
Número de pieza | Descripción | Fabricantes |
1N5830 | 25 Amp Schottky Rectifier | Microsemi Corporation |
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1N5830 | (1N5829 - 1N5831R) Silicon Power Schottky Diode | America Semiconductor |
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