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Datasheet 1N5827R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5827R | Silicon Power Schottky Diode Silicon Power Schottky Diode
Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N5826 thru 1N5828R
VRRM = 20 V - 40 V IF = 15 A
DO-4 Package
Maximum ratings |  GeneSiC | diode |
| 2 | 1N5827R | SCHOTTKY DIODES Transys
Electronics
LIMITED
1N5826(R) THRU
1N5828(R)
SCHOTTKY DIODES STUD TYPE
Features
High Surge Capability
Types up to 40V V RRM
15 A
15Amp Rectifier 20-40 Volts
DO-5
Maximum Ratings
Operating Temperature: -65 C to +150
Storage Temperature: -65 C to +175
B N MC
Part Number
1N5826(R) 1N5827 |  TRANSYS | diode |
| 3 | 1N5827R | Schottky Power Diode Naina Semiconductor Ltd.
Schottky Power Diode, 15A
Features
• • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
1N5826 thru 1N5828R
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted) Paramet |  Naina Semiconductor | diode |
| 4 | 1N5827R | Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
|  America Semiconductor | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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