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PDF 1N5828 Data sheet ( Hoja de datos )
| Número de pieza | 1N5828 | |
| Descripción | Silicon Power Schottky Diode | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N5826 thru 1N5828R
VRRM = 20 V - 40 V
IF = 15 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N5826 (R)
1N5827 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
IF,SM
Tj
Tstg
TC ≤ 100 °C
TC = 25 °C, tp = 8.3 ms
20
14
20
15
500
-55 to 150
-55 to 150
30
21
30
15
500
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N5826 (R)
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
VF IF = 15 A, Tj = 25 °C
IR
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
RthJC
0.44
10
250
1.8
1N5827 (R)
0.47
10
250
1.8
1N5828 (R)
40
28
40
15
500
-55 to 150
-55 to 150
1N5828 (R)
0.5
10
250
1.8
Unit
V
V
V
A
A
°C
°C
Unit
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1N5828.PDF ] | |
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