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PDF 1N5711 Data sheet ( Hoja de datos )
| Número de pieza | 1N5711 | |
| Descripción | Small Signal Schottky Diodes | |
| Fabricantes | LGE | |
| Logotipo |  |
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Features
For general purpos e applications
Metal s ilicon s chottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fas t s witching m ake it ideal for protection of
MOS devices ,s teering,bias ing and coupling diodes for
fas t s witching and low logic level applications
Mechanical Data
Cas e:JEDEC DO--35,glas s cas e
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
1N5711
Small Signal Schottky Diodes
VOLTAGE RANGE: 70V
POWER DISSIPATION: 400 mW
DO - 35(GLASS)
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Peak reverse voltage
VRRM
Pow er dissipation (Inf inite Heat Sink)
Ptot
Maximum single cycle surge 10 s square w ave
IF SM
Junction tenperature
TJ
Storage temperature range
TSTG
1)V alid provided that leads at a distance of 4mm f rom case are kept at ambient temperature
Value
70.0
4001)
2.0
125
c-55 ---+ 150
UNITS
V
zm W
A
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Symbols
Reverse breakdow n voltage
@ IR=10 A
Leakage current
@ VR=50V
Forw ard voltage drop @ IF=1mA
IF=15mA
Junction capacitance @ V R=0V ,f=1MHz
Reverse recovery time @ IF=IR=5mA ,recover to 0.1 IR
Termal resistance junction to ambient air
VR
IR
VF
CJ
trr
RθJA
Min.
70.0
Typ.
Max.
2 0 0 .0
0.41
1.0
2
1
0.3
UNITS
V
anA
V
pF
ns
/m W
http://www.luguang.cn
mail:[email protected]
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N5711.PDF ] | |
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| 1N5711 | Schottky Diodes |  General Semiconductor |
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