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PDF 1N6263 Data sheet ( Hoja de datos )
| Número de pieza | 1N6263 | |
| Descripción | Small Signal Schottky Barrier Diode | |
| Fabricantes | CENPAK | |
| Logotipo |  |
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CENPAK ELECTRONICS
Features
1. For general purpose applications
2. Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard ring. The
low forward voltage drop and fast switching
make i t ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
Mechanical Data
Case: DO-35 Glass Case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Colour band denotes cathode end
Mounting Position: Any
Weight: approx. 0.005 ounce, 0.14grams
1N5711 / 1N6263
Small Signal Schottky Barrier Diode
Standard Glass Case JEDEC DO-35
Dimensions in inches and (mm)
0.020 (0.52)
max
0.079 (2.0)
max
1.0 (25.4)
min
0.165 (4.2)
max
1.0 (25.4)
min
Absolute Maximum Ratings Tamb =25 OC unless otherwise specified
Parameter
Test Condition
Part
Repetitive peak revers voltage
1N5711
1N6263
Peak forward surge current
Power dissipation
tp = 10 ms
l = 4 mm, TL = constant
Symbol
VRRM
VRRM
IFSM
Ptot
Value
70
60
2.0
400
Unit
V
V
A
mW
Thermal Characteristics Tamb =25 OC unless otherwise specified
Parameter
Test Condition
Thermal resistance, Junction
to ambient
l = 4 mm, TL = constant
Junction temperature
Storage temperature
Symbol
RthJA
Tj
Tstg
Value
350
125
-65 ~ 175
Unit
OC / W
OC
OC
Electrical Characteristics Tamb =25 OC unless otherwise specified
Parameter
Test Condition
Reverse breakdown voltage
IR = 10 mA
Forward voltage
Reverse leakage current
Diode capacitance
IF = 1.0 mA
IF = 15 mA
VR = 50 V
VR = 0V, f = 1.0MHz
Reverse recovery time
IF = 5mA, IR = 5mA,
Irr = 0.1m, RL = 100 W
Part
1N5711
1N6263
1N5711
1N6263
Symbol
VR
VR
VF
V—— F
—
IR
Ctot
Ctot
trr
Min
70
60
Typ.
2.0
2.2
Max
0.41
1.0
200
1.0
Unit
V
V
V
V
nA
pF
pF
ns
www.njcenpak.com.cn
Rev. 1.0, 1 Jun 2004
1(2)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N6263.PDF ] | |
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