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PDF 1N5711 Data sheet ( Hoja de datos )
| Número de pieza | 1N5711 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | EDCON | |
| Logotipo |  |
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1N5711 / 1N6263
Schottky Barrier Diode
Features
1. For general purpose applications.
2. Metal-on-silicon schottky barrier device
which is protected by a PN junction guard
ring. The low forward voltage drop and fast
switching make it ideal for protection of
MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level
applications.
3. This diode is also available in the Mini MELF
case with type designation LL5711 and LL6263.
Absolute Maximum Ratings(Tj=25℃)
Parameter
Peak inverse voltage
Maximum single cycle surge 10us square wave
Power dissipation
Maximum junction temperature
Storage temperature range
Part
1N5711
1N6263
Symbol
VRRM
VRRM
IFSM
Ptot
Tj
TS
Value
70
60
2.0
400
125
-55~+150
Unit
V
V
A
mW
℃
℃
Electrical Characteristics(Tj=25℃)
Parameter
Reverse breakdown
voltage
Leakage current
Forward voltage drop
Junction capacitance
Reverse recovery time
Symbol
Test Conditions
Part Min Typ Max Unit
V(BR)R IR=10μA (pulsed)
1N5711 70 - - V
1N6263 60 - - V
IR VR=50V
VF
IF=1mA
IF=15mA
Ctot VR=0V, f=1MHz
1N5711
1N6263
-
-
-
-
-
- 200 nA
- 0.41 V
- 1.0 V
- 2.0 pF
- 2.2 pF
trr IF= IR=5mA recover to 0.1 IR
- - 1.0 ns
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1N5711.PDF ] | |
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