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PDF 1N5711 Data sheet ( Hoja de datos )
| Número de pieza | 1N5711 | |
| Descripción | Small-Signal Diode | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Features
For general purpose applications
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring. The low forward voltage drop and fast
switching make it ideal for protection of MOS devices, steering,
biasing and coupling diodes for fast switching and low logic
level applications.
This diode is also available in the MiniMELF case with type
designation LL5711 and LL6263.
1N5711 and 1N6263
Small-Signal Diode
Schottky Diodes
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified.)
Parameter
Symbol
Value
Peak inverse voltage
Power dissipation (Infinite heatsink)
1N5711
1N6263
Maximum single cycle surge 10 us square wave
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
VRRM
Ptot
IFSM
RθJA
Tj
TS
70
60
400 (1)
2.0
0.3 (1)
125 (1)
-55 to +150 (1)
Unit
Volts
mW
Amps
oC/mW
oC
oC
Electrical Characteristics
(T =25oC unless otherwise noted.)
J
Parameter
Symbol
Test Condition
Min. Typ. Max. Unit
Reverse breakdown voltage
1N5711
1N6263
V(BR)R
IR=10uA
70
60
Leakage current
IR
VR=50V
-
Forward voltage drop
VF
IF=1mA
IF=15mA
-
-
Junction capacitance
Ctot
VR=0V, f=1MHz
-
Reverse recovery time
trr
IF=IR=5mA,
recover to 0.1IR
-
Notes: 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
415
-
-
-
-
Volts
- 200 nA
-
-
0.41
1.0
Volt
- 2.2 pF
- 1 ns
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N5711.PDF ] | |
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