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PDF 1N6263 Data sheet ( Hoja de datos )
| Número de pieza | 1N6263 | |
| Descripción | SILICON SCHOTTKY BARRIER DIODES | |
| Fabricantes | BLUECOLOUR | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N6263 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SD101A (1N6263)...SD101C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
The SD101 Series is a metal on silicon Schottky barrier
device which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make
it ideal for protection of MOS devices, steering, biasing
and coupling diodes for fast switching and low logic
level applications.
The SD101A is equivalent to the 1N6263.
This diode is also available in MiniMELF case with
type designation LL101A, B, C.
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
XXX
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Peak Reverse Voltage
Power Dissipation
SD101A
SD101B
SD101C
VRRM
Ptot
60
50
40
400 1)
Maximum Single Cycle Surge, 10 s Square wave
IFSM
2
Junction Temperature
Tj 200
Storage Temperature Range
TS - 55 to + 200
1) Valid provided the leads direct at the case are kept at ambient temperature.
Unit
V
mW
A
OC
OC
Characteristics at Ta = 25 OC
Parameter
Reverse Breakdown Voltage
at IR = 10 µA
Forward Voltage
at IF = 1 mA
at IF = 15 mA
Reverse Leakage Current
at VR = 50 V
at VR = 40 V
at VR = 30 V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 5 mA , recover to 0.1 IR
Symbol
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
SD101A
SD101B
SD101C
V(BR)R
VF
IR
SD101A
SD101B
SD101C
Ctot
trr
Min.
60
50
40
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.41
0.4
0.39
1
0.95
0.9
200
2
2.1
2.2
1
Unit
V
V
nA
pF
ns
Page 1 of 2
7/25/2012
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N6263.PDF ] | |
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