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P2N3020 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 P2N3020
部品説明 ONE WATT AMPLIFIER TRANSISTORS
メーカ Motorola
ロゴ Motorola ロゴ 

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P2N3020 Datasheet, P2N3020 PDF,ピン配置, 機能
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T s tg
Symbol
Rwc
Roja
Value
80
120
7.0
1.0
1.0
8.0
2.5
20
-55 to +150
Max
50
125
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°c/w
P2N3019
P2N3020
CASE 29-3, STYLE 1
TO-92 (TO-226AE)
ONE WATT
AMPLIFIER TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
{l,C = 30 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC'•= 100uAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 100uAdc, Ic = 0)
Collector Cutoff Current
(VcB = 90 Vdc, IE = 0)
(VcB " 90 Vdc, Ie = 0, Ta = + 1 50 °C)
Emitter Cutoff Current
(VBE = 5.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 0.1 mAdc, VcE = 10 Vdc)
P2N3020
P2N3019
(IC = 10 mAdc, VcE = 1 Vdc)
P2N3019
P2N3020
dC = 1 50 mAdc, VcE = 10 Vdc)
P2N3019
P2N3020
dC = 150mAdc, Vce = 10 Vdc, Tc =-55°C)
(IC = 500 mAdc, Vce = 10 Vdc)
P2N3019
P2N3019
P2N3020
(IC = 1.0 Adc, VcE = 10 Vdc)
Collector-Emitter Saturation Voltage
(IC = 1 50 mAdc, Ib = 1 5 mAdc)
(IC = 500 mAdc, Ib = 50 mAdc)
All Types
Base-Emitter Saturation Voltage
dC = 1 50 mAdc, Ib = 1 5 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
dC = 50 mAdc, VcE = 1 Vdc, f = 20 MHz)
P2N3019
P2N3020
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
lEBO
hFE
VCE(sat)
VBE(sat)
Min
80
120
7.0
50
30
90
40
100
40
40
50
30
15
80
100
Max
0.01
10
0.010
100
120
300
120
100
0.2
0.5
1.1
Unit
Vdc
Vdc
Vdc
uAdc
nAdc
Vdc
Vdc
MHz
2-291

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