MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation Ta = 25°C
Derate above 25°C
Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T s tg
Symbol
Rwc
Roja
Value
80
120
7.0
1.0
1.0
8.0
2.5
20
-55 to +150
Max
50
125
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°c/w
P2N3019
P2N3020
CASE 29-3, STYLE 1
TO-92 (TO-226AE)
ONE WATT
AMPLIFIER TRANSISTORS
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
{l,C = 30 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC'•= 100uAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 100uAdc, Ic = 0)
Collector Cutoff Current
(VcB = 90 Vdc, IE = 0)
(VcB " 90 Vdc, Ie = 0, Ta = + 1 50 °C)
Emitter Cutoff Current
(VBE = 5.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 0.1 mAdc, VcE = 10 Vdc)
P2N3020
P2N3019
(IC = 10 mAdc, VcE = 1 Vdc)
P2N3019
P2N3020
dC = 1 50 mAdc, VcE = 10 Vdc)
P2N3019
P2N3020
dC = 150mAdc, Vce = 10 Vdc, Tc =-55°C)
(IC = 500 mAdc, Vce = 10 Vdc)
P2N3019
P2N3019
P2N3020
(IC = 1.0 Adc, VcE = 10 Vdc)
Collector-Emitter Saturation Voltage
(IC = 1 50 mAdc, Ib = 1 5 mAdc)
(IC = 500 mAdc, Ib = 50 mAdc)
All Types
Base-Emitter Saturation Voltage
dC = 1 50 mAdc, Ib = 1 5 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
dC = 50 mAdc, VcE = 1 Vdc, f = 20 MHz)
P2N3019
P2N3020
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
lEBO
hFE
VCE(sat)
VBE(sat)
Min
80
120
7.0
—
—
50
30
90
40
100
40
40
50
30
15
—
—
80
100
Max
—
—
—
0.01
10
0.010
100
120
300
120
—
100
—
0.2
0.5
1.1
Unit
Vdc
Vdc
Vdc
uAdc
nAdc
Vdc
Vdc
MHz
2-291
