|
|
PDF 1N5808 Data sheet ( Hoja de datos )
| Número de pieza | 1N5808 | |
| Descripción | HIGH EFFICIENCY RECTIFIERS | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 1N5808 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
1N5807-1N5811
High-reliability discrete products
and engineering services since 1977
HIGH EFFICIENCY RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Working peak reverse voltage
1N5807
1N5808
1N5809
1N5810
1N5811
VRWM
50
75
100
125
150
V
Forward surge current (1)
Average rectified output current @ TL = 75°C at 3/8” lead length (2)
Average rectified output current @ TA = 55°C at 3/8” lead length (3)
IFSM
IO1
IO2
125
6.0
3.0
A
A
A
Capacitance @ VR = 10V, f = 1MHz, Vsig = 50mV(p-p)
Reverse recovery time (4)
C 60 pF
trr 30 ns
Solder temperature @ 10 s
TSP 260
°C
Junction and storage temperature range
TJ, Tstg
-65 to +175
°C
Thermal resistance junction to lead (L = 0.375”)
RѲJL 22 °C/W
Note 1: TA = 25°C @ IO = 3.0A and VRWM for 10 8.3ms surges at 1 minute intervals.
Note 2: IO1 is rated @ TL = 75°C at 3/8” lead length. Derate at 60mA/°C for TL above 75°C.
Note 3: IO2 is derated at 25mA/°C above TA = 55°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) 175°C is not exceeded.
Note 4: IF = 1.0A, IRM = 1.0A, IR(REC) = 0.10A. and di/dt = 100A/µs min.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part
number
Minimum
breakdown
voltage @ 100µA
V(BR)
Maximum forward
voltage @ 4A
(8.3ms pulse)
VFM
Volts
Volts
25°C 125°C
1N5807
60
0.875
0.800
1N5808
85
0.875
0.800
1N5809
110
0.875
0.800
1N5810
135
0.875
0.800
1N5811
160
0.875
0.800
Note 5: TA = 25°C @ IO = 3.0A and VRWM for ten 8.3ms surges at 1 minute intervals.
Note 6: IF = 1.0A, IRM = 1.0A, IR(REC) = 0.10A and di/dt = 100A/µs min.
Maximum reverse
current @ VRWM
IR
µA
25°C 125°C
5 525
5 525
5 525
5 525
5 525
Maximum surge
current (5)
IFSM
Amps
125
125
125
125
125
Maximum reverse
recovery time (6)
trr
ns
30
30
30
30
30
Rev. 20150713
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 1N5808.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 1N5802 | DOIDE ULTRA FAST RECOVERY RECTIFIER 3A 2DIE |  New Jersey Semiconductor |
| 1N5802 | VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS |  Microsemi |
| 1N5802 | RECTIFIER DIODE |  Semtech |
| 1N5802 | GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS |  EIC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |