|
|
1N5807のメーカーはEICです、この部品の機能は「ULTRAFAST RECOVERY RECTIFIER DIODES」です。 |
部品番号 | 1N5807 |
| |
部品説明 | ULTRAFAST RECOVERY RECTIFIER DIODES | ||
メーカ | EIC | ||
ロゴ | |||
このページの下部にプレビューと1N5807ダウンロード(pdfファイル)リンクがあります。 Total 2 pages
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
1N5807 - 1N5811
PRV : 50 - 150 Volts
Io : 6.0 Amperes
ULTRAFAST RECOVERY
RECTIFIER DIODES
D2A
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ultrafast recovery time
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
0.161 (4.1)
0.154 (3.9)
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Working Peak Reverse Voltage
Minimum Breakdown Voltage @ 100µA
Maximum Average Forward Current
Maximum Forward Surge Current (3)
Maximum Peak Forward Voltage at IF = 4.0 A.
Maximum Reverse Current at VRWM
Ta = 25 °C
Ta = 100 °C
Maximum Reverse Recovery Time (4)
Thermal Resistance, Junction to Lead
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRWM
VBR(Min)
IF(AV)
IFSM
VF
IR
IR(H)
Trr
RӨJL
TJ
TSTG
1N5807
50
60
1N5809
100
110
6.0 (1)
3.0 (2)
125
0.875
5.0
150
30
22
- 65 to + 175
- 65 to + 175
1N5811
150
160
Notes :
(1) Rated at TL=75 °C at 3/8 inc lead length. Derate at 60 mA/°C for TL above 75 °C.
(2) Derate linearly at 25 mA/°C above Ta = 55 °C. This rating is typical for PC boards where thermal resistance from mounting
point to ambient is sufficiently controlled where TJ(max) dose not exceed 175 °C.
(3) Ta = 25 °C @ IF(AV) = 3A and VRWM for ten 8.3 ms surges at 1 minute intervals.
(4) IF = 1A, IRM = 1A, IR(REC) = 0.1 A and di/dt = 10 A/μs min.
UNIT
V
V
A
A
V
μA
ns
°C/W
°C
°C
Page 1 of 2
Rev. 00 : April 4, 2007
1 Page | |||
ページ | 合計 : 2 ページ | ||
|
PDF ダウンロード | [ 1N5807 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1N5802 | DOIDE ULTRA FAST RECOVERY RECTIFIER 3A 2DIE | New Jersey Semiconductor |
1N5802 | VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS | Microsemi |
1N5802 | RECTIFIER DIODE | Semtech |
1N5802 | GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS | EIC |