|
|
PDF 1N5806 Data sheet ( Hoja de datos )
| Número de pieza | 1N5806 | |
| Descripción | VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS | |
| Fabricantes | Microsemi | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 1N5806 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
1N5802, 1N5804, 1N5806
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED ULTRAFAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 2.5 amp rated rectifiers
with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless glass
construction using an internal “Category 1” metallurgical bond. These devices are available in both
leaded and surface mount MELF package configurations. Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5802, 1N5804, 1N5806 series.
• Voidless hermetically sealed glass package.
• Quadruple-layer passivation.
• Extremely robust construction.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualifications are availble per MIL-PRF-19500/477.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Ultrafast recovery 2.5 amp rectifier series from 50 to 150 V.
• Military, space and other high-reliability applications.
• Switching power supplies or other applications requiring extremely fast switching & low forward
loss.
• High forward surge current capability.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS @ TA= 25oC unless otherwise specified
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
“A” Package
Also available in:
“A” (D-5A) MELF
Package
(surface mount)
1N5802, 04, 06US & URS
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead (L = .375 in)
see Figure 1
TJ and TSTG
R ӨJL
-65 to +175
36
oC
oC/W
Working Peak Reverse Voltage:
1N5802
1N5804
V RWM
50 V
100
1N5806
150
Forward Surge Current (3)
IFSM
35 A
Average Rectified Output Current
@ TL = +75 oC at 3/8 inch lead length (1)
IO1 2.5 A
Average Rectified Output-Current
@ TA = +55 oC at 3/8 inch lead length (2)
IO2 1.0 A
Capacitance
C 25 pF
@ VR = 10 V, f = 1 MHz; Vsig = 50 mV (p-p)
Reverse Recovery Time (4)
trr 25 ns
Solder Temperature @ 10 s
TSP 260 oC
Notes: 1. IO1 is rated at 2.5 A @ T L = 75 oC at 3/8 inch lead length. Derate at 25 mA/oC for T L above 75 oC.
2. IO2 is rated at 1.0 A @ T A = 55 oC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled (R ӨJX < 154 oC/W) where T J(max) 175 oC is not exceeded. Derate at 8.33
mA/oC for T A above 55 oC.
3. T A = 25 oC @ IO = 1.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals.
4. IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0211, Rev. 1 (111900)
©2011 Microsemi Corporation
Page 1 of 5
1 page  
1N5802, 1N5804, 1N5806
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension BL shall include the entire body including slugs and
sections of the lead over which the diameter is uncontrolled. This
uncontrolled area is defined as the zone between the edge of the
diode body and extending .050 inch (1.27 mm) onto the leads.
4. Dimension BD shall be measured at the largest diameter.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
DIMENSIONS
Ltr
INCH
MILLIMETERS Notes
Min Max Min Max
BD .065 .085 1.65 2.16
4
BL .125 .250 3.18 6.35
3
LD .027 .032 0.69 0.81
3
LL .700 1.30 17.78 33.02
T4-LDS-0211, Rev. 1 (111900)
©2011 Microsemi Corporation
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 1N5806.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 1N5802 | DOIDE ULTRA FAST RECOVERY RECTIFIER 3A 2DIE |  New Jersey Semiconductor |
| 1N5802 | VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS | Microsemi |
| 1N5802 | RECTIFIER DIODE |  Semtech |
| 1N5802 | GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS |  EIC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |