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1N5802 の電気的特性と機能

1N5802のメーカーはMicrosemiです、この部品の機能は「VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N5802
部品説明 VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS
メーカ Microsemi
ロゴ Microsemi ロゴ 




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1N5802 Datasheet, 1N5802 PDF,ピン配置, 機能
1N5802, 1N5804, 1N5806
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED ULTRAFAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 2.5 amp rated rectifiers
with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless glass
construction using an internal “Category 1” metallurgical bond. These devices are available in both
leaded and surface mount MELF package configurations. Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 1N5802, 1N5804, 1N5806 series.
Voidless hermetically sealed glass package.
Quadruple-layer passivation.
Extremely robust construction.
Internal “Category 1” metallurgical bonds.
JAN, JANTX, JANTXV and JANS qualifications are availble per MIL-PRF-19500/477.
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
Ultrafast recovery 2.5 amp rectifier series from 50 to 150 V.
Military, space and other high-reliability applications.
Switching power supplies or other applications requiring extremely fast switching & low forward
loss.
High forward surge current capability.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RATINGS @ TA= 25oC unless otherwise specified
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
“A” Package
Also available in:
“A” (D-5A) MELF
Package
(surface mount)
1N5802, 04, 06US & URS
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead (L = .375 in)
see Figure 1
TJ and TSTG
R ӨJL
-65 to +175
36
oC
oC/W
Working Peak Reverse Voltage:
1N5802
1N5804
V RWM
50 V
100
1N5806
150
Forward Surge Current (3)
IFSM
35 A
Average Rectified Output Current
@ TL = +75 oC at 3/8 inch lead length (1)
IO1 2.5 A
Average Rectified Output-Current
@ TA = +55 oC at 3/8 inch lead length (2)
IO2 1.0 A
Capacitance
C 25 pF
@ VR = 10 V, f = 1 MHz; Vsig = 50 mV (p-p)
Reverse Recovery Time (4)
trr 25 ns
Solder Temperature @ 10 s
TSP 260 oC
Notes: 1. IO1 is rated at 2.5 A @ T L = 75 oC at 3/8 inch lead length. Derate at 25 mA/oC for T L above 75 oC.
2. IO2 is rated at 1.0 A @ T A = 55 oC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled (R ӨJX < 154 oC/W) where T J(max) 175 oC is not exceeded. Derate at 8.33
mA/oC for T A above 55 oC.
3. T A = 25 oC @ IO = 1.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals.
4. IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0211, Rev. 1 (111900)
©2011 Microsemi Corporation
Page 1 of 5

1 Page





1N5802 pdf, ピン配列
GRAPHS
1N5802, 1N5804, 1N5806
Heating Time (sec)
FIGURE 1
Maximum Thermal Impedance
IO (A)
FIGURE 2
Rectifier Power vs IO (Average Forward Current)
T4-LDS-0211, Rev. 1 (111900)
©2011 Microsemi Corporation
Page 3 of 5


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共有リンク

Link :


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VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS

Microsemi
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1N5802

RECTIFIER DIODE

Semtech
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1N5802

GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS

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