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1N5419 の電気的特性と機能

1N5419のメーカーはMicrosemiです、この部品の機能は「VOIDLESS HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N5419
部品説明 VOIDLESS HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
メーカ Microsemi
ロゴ Microsemi ロゴ 




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1N5419 Datasheet, 1N5419 PDF,ピン配置, 機能
1N5415 thru 1N5420
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/411
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak
reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an
internal “Category 1” metallurgical bond. These devices are also available in surface mount MELF
package configurations. Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount packages.
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Popular JEDEC registered 1N5415 thru 1N5420 series.
Voidless hermetically sealed glass package.
Quadruple-layer passivation.
Internal “Category 1” metallurgical bonds.
Working Peak Reverse Voltage 50 to 600 volts.
JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411.
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
Fast recovery 3 amp 50 to 600 volt rectifiers.
Military and other high-reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Extremely robust construction.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS
“B” Package
Also available in:
“B” SQ-MELF
(D-5B) Package
(surface mount)
1N5415US – 1N5420US
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead (1)
Forward Surge Current @ 8.3 ms half-sine
Average Rectified Forward Current (4) @ TA = +55 oC
@ TA = +100
oC
Working Peak Reverse Voltage
1N5415
1N5416
1N5417
1N5418
1N5419
Maximum Reverse Recovery Time (5)
1N5420
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
Solder Temperature @ 10 s
See notes on next page.
Symbol
TJ and TSTG
R ӨJL
IFSM
I O (2, 3)
I O (3)
V RWM
t rr
TSP
Value
-65 to +175
22
80
3
2
50
100
200
400
500
600
150
150
150
150
250
400
260
Unit
oC
oC/W
A
A
V
ns
oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0231, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 1 of 5

1 Page





1N5419 pdf, ピン配列
1N5415 thru 1N5420
TYPE
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAKDOWN
VOLT AGE
V BR @ 50 µA
Volts
55
110
220
440
550
660
FORWARD
VOLT AGE
VF @ 9 A
MIN.
Volts
0.6
0.6
0.6
0.6
0.6
0.6
MAX.
Volts
1.5
1.5
1.5
1.5
1.5
1.5
MAXIMUM
REVERSE
CURRENT
IR @ V RWM
25 oC
µA
1.0
1.0
1.0
1.0
1.0
1.0
100 oC
µA
20
20
20
20
20
20
NOTE 1: IF = 0.5 A, IRM = 1 A, IR(REC) = 0.250 A.
CAP AC IT ANCE
C
VR @ 4 V
pF
550
430
250
165
140
120
T4-LDS-0231, Rev. 1 (111902)
©2011 Microsemi Corporation
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共有リンク

Link :


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