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PDF 1N5417 Data sheet ( Hoja de datos )
| Número de pieza | 1N5417 | |
| Descripción | VOIDLESS HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS | |
| Fabricantes | Microsemi | |
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1N5415 thru 1N5420
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/411
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak
reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an
internal “Category 1” metallurgical bond. These devices are also available in surface mount MELF
package configurations. Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount packages.
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Popular JEDEC registered 1N5415 thru 1N5420 series.
• Voidless hermetically sealed glass package.
• Quadruple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• Working Peak Reverse Voltage 50 to 600 volts.
• JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Fast recovery 3 amp 50 to 600 volt rectifiers.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Extremely robust construction.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS
“B” Package
Also available in:
“B” SQ-MELF
(D-5B) Package
(surface mount)
1N5415US – 1N5420US
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead (1)
Forward Surge Current @ 8.3 ms half-sine
Average Rectified Forward Current (4) @ TA = +55 oC
@ TA = +100
oC
Working Peak Reverse Voltage
1N5415
1N5416
1N5417
1N5418
1N5419
Maximum Reverse Recovery Time (5)
1N5420
1N5415
1N5416
1N5417
1N5418
1N5419
1N5420
Solder Temperature @ 10 s
See notes on next page.
Symbol
TJ and TSTG
R ӨJL
IFSM
I O (2, 3)
I O (3)
V RWM
t rr
TSP
Value
-65 to +175
22
80
3
2
50
100
200
400
500
600
150
150
150
150
250
400
260
Unit
oC
oC/W
A
A
V
ns
oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0231, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 1 of 5
1 page  
PACKAGE DIMENSIONS
1N5415 thru 1N5420
Symbol
BD
LD
BL
LL
Dimensions
Inch
Millimeters
Min Max Min Max
0.110 0.180 2.79 4.57
0.036 0.042 0.91
0.130 0.260 3.30
0.90 1.30 22.9
1.07
6.60
33.0
Notes
3
4
4
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. The BL dimension shall include the entire body including slugs and sections of the lead over which the diameter is
uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending
.050 inch (1.27 mm) onto the leads.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0231, Rev. 1 (111902)
©2011 Microsemi Corporation
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 1N5417.PDF ] | |
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