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PDF 1N4946 Data sheet ( Hoja de datos )

Número de pieza 1N4946
Descripción Fast Recovery Glass Rectifiers
Fabricantes Microsemi 
Logotipo Microsemi Logotipo



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No Preview Available ! 1N4946 Hoja de datos, Descripción, Manual

1N4942 – 1N4946
Available on
commercial
versions
Voidless Hermetically Sealed
Fast Recovery Glass Rectifiers
Qualified per MIL-PRF-19500/359
DESCRIPTION
This Series of industry recognized voidless, hermetically sealed fast recovery glass rectifiers
are military qualified to MIL-PRF-19500/359 and are ideal for high-reliability applications where
a failure cannot be tolerated. They provide a working peak reverse voltage selection from 200
to 600 Volts with a 1.0 amp current rating. They are very robust in hard-glass construction and
also use an internal metallurgical bond identified as "Category 1" for high-reliability
applications. These devices are similar in ratings to the 1N5615 through 1N5619 series where
surface mount MELF package configurations are also available by adding a “US” suffix (see
separate data sheets).
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Popular JEDEC registered 1N4942 through 1N4946 number series.
Voidless hermetically sealed glass package.
Triple-layer passivation.
Internal “Category 1” metallurgical bonds.
Working peak reverse voltage 200 to 600 volts.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/359.
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
Fast recovery 1 amp rectifiers 200 to 600 V.
Military and other high reliability applications.
General rectifier applications including bridges, half-bridges, catch diodes, etc.
High forward surge current capability.
Extremely robust construction.
Low thermal construction.
Controlled avalanche with peak power capability.
Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS @ TA= 25 oC unless otherwise specified
Qualified Levels:
JAN, JANTX,
and JANTXV
“A” Package
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead
(Lead length = .375 in) also see Figure 1
Thermal Resistance @ 10 ms heating time
Average Rectified Forward Current
Working Peak Reverse Voltage
@ TA = +55°C
@ TA = +100°C
1N4942
1N4944
1N4946
Maximum Forward Surge Current
@ tp = 8.3 ms, IO = .750 A, TA = +55 ºC
Solder Temperature @ 10 s
Symbol
TJ and TSTG
R ӨJL
R ӨJX
IO
V RWM
IFSM
TSP
Value
-65 to +175
38
115
1.0 (1) (2)
0.750 (2)
200
400
600
15
260
Unit
oC
oC/W
ºC/W
Amps
V
Amps
oC
Notes: 1. Derate linearly from 1.0 A at T A = +55 °C to 0.75 A at +100 °C. Derate linearly from 0.75 A to 0 A
between +100 °C and +175 °C.
2. For the 1 amp rating at 55 °C ambient or 0.75 amp rating at 100 °C ambient, these IO ratings are for
thermal (PC boards or other) mounting methods where thermal resistance from mounting point to
ambient is still sufficiently controlled where T J(MAX) in 1.3 is not exceeded. This equates to RθJX
≤ 115 ºC/W as shown.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0295, Rev. 1 (130278)
©2013 Microsemi Corporation
Page 1 of 5

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1N4946 pdf
PACKAGE DIMENSIONS
1N4942 – 1N4946
NOTES:
1. Dimensions are in inches.
2. Millimeters equivalents are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. Dimension BL shall include the entire body including slugs and
sections of the lead over which the diameter is uncontrolled. This
uncontrolled area is defined as the zone between the edge of the
diode body and extending .050 inch (1.27 mm) onto the leads.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
DIMENSIONS
Ltr
INCH
MILLIMETERS Notes
Min Max Min Max
BD 0.065 0.150 1.65 3.81 3, 4
BL 0.140 0.250 3.56 6.35
4
LD 0.027 0.033 0.69 0.84
LL 1.00 1.50 25.4 38.1
T4-LDS-0295, Rev. 1 (130278)
©2013 Microsemi Corporation
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