Datasheet BCW60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BCW60	Small Signal Transistors BCW60 Series New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 Top View .056 (1.43) .052 (1.33) 12 .037(0.95) .037(0.95) Pin Configuration 1. Base 2. Emitter 3. Collector Mounting Pad Layout	Vishay	transistor
2	BCW60	NPN Silicon Epitaxial Planar Transistors BCW60 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61 are recommended. SOT-23 Plastic Package Absolute Maximum	SEMTECH	transistor
3	BCW60	SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 AUGUST 1995 PARTMARKING DETAILS BCW60A AA BCW60B AB BCW60C AC BCW60D AD BCW60AR CR BCW60BR DR BCW60CR AR BCW60DR BR COMPLEMENTARY TYPE BCW61 BCW60 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Volta	Zetex Semiconductors	transistor
4	BCW60	NPN general purpose transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW60 series NPN general purpose transistors Product speciﬁcation Supersedes data of 1997 Mar 10 1999 Apr 22 Philips Semiconductors Product speciﬁcation NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low v	NXP Semiconductors	transistor
5	BCW60	NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX	Siemens Semiconductor Group	transistor

BCW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BCW29	EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌComplementary to BCW31/32 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current	KEC	transistor
2	BCW29	PNP General Purpose Transistors SMD Type TransistIoCrs PNP General Purpose Transistors BCW29,BCW30 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Colle	Kexin	transistor
3	BCW29	Silicon Planar Epitaxial Transistor	Philips	transistor
4	BCW29	GENERAL PURPOSE TRANSISTOR BCW29,30 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO VCBO vESO ic THERMAL CHARACTERISTICS Characteristic *Total Device	Motorola Semiconductors	transistor
5	BCW29	SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2	CDIL	transistor
6	BCW29	PNP general purpose transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general purpose transistors Product speciﬁcation Supersedes data of 1997 Sep 03 1999 Apr 13 Philips Semiconductors Product speciﬁcation PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low v	NXP Semiconductors	transistor
7	BCW29	Surface mount Si-Epitaxial PlanarTransistors BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-28 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C 2.5 max 1.3±0.1 Power dissipation – Verlus	Diotec Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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