|
|
BCW60CのメーカーはRECTRONです、この部品の機能は「NPN Transistor」です。 |
部品番号 | BCW60C |
| |
部品説明 | NPN Transistor | ||
メーカ | RECTRON | ||
ロゴ | |||
このページの下部にプレビューとBCW60Cダウンロード(pdfファイル)リンクがあります。 Total 2 pages
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
BCW60C
FEATURES
* Power dissipation
PCM :
0.25
W (Tamb=25OC)
* Collector current
ICM :
0.1 A
* Collector-base voltage
V(BR)CBO : 32
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= 10mA, IE=0)
SYMBOL
V(BR)CBO
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
Emitter-base breakdown voltage (IE= 10mA, IC=0)
Collector cut-off current (VCB= 32V, IE=0)
V(BR)CEO
V(BR)EBO
ICBO
Collector cut-off current (VEB= 4V, IC=0)
IEBO
DC current gain (VCE= 5V, IC= 10mA)
DC current gain (VCE= 5V, IC= 2mA)
DC current gain (VCE= 5V, IC= 50mA)
hFE
Collector-emitter saturation voltage (IC= 10mA, IB= 0.25mA)
Collector-emitter saturation voltage (IC= 50mA, IB= 1.25mA)
VCE(sat)
Base-emitter saturation voltage (IC= 10mA, IB= 0.25mA)
Base-emitter saturation voltage (IC= 50mA, IB= 1.25mA)
Base-emitter voltage (VCE= 5V, IC= 2mA)
Transition frequency (VCE= 5V, IC= 10mA, f=100MHZ)
Output capacitance (VCB= 10V, IE= 0, f=1MHZ)
VBE(sat)
VBE
fT
Cob
Marking
SOT-23
COLLECTOR
3
BASE 1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN TYP
32 -
32 -
5-
--
--
40 -
250 -
100 -
--
--
--
--
0.55 -
100 -
--
AC
MAX
-
-
-
0.02
0.02
-
460
-
0.35
0.55
0.85
1.05
0.75
-
5
UNITS
V
V
V
mA
mA
-
-
-
V
V
V
V
V
MHZ
pF
2006-3
1 Page | |||
ページ | 合計 : 2 ページ | ||
|
PDF ダウンロード | [ BCW60C データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BCW60 | NPN general purpose transistors | NXP Semiconductors |
BCW60 | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) | Siemens Semiconductor Group |
BCW60 | NPN Silicon AF Transistors | Infineon Technologies AG |
BCW60 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |