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Datasheet 1N5186 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5186 | FAST RECOVERY GLASS RECTIFIERS 1N5186 thru 1N5188, 1N5190
Available on commercial
versions
VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/424
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure | Microsemi | rectifier |
2 | 1N5186 | FAST RECOVERY RECTIFIERS SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 124, REV A
1N5186 1N5187 1N5188 1N5190
SJ SX SV
FAST RECOVERY RECTIFIERS
MAX. RATINGS / ELECTRICAL CHARACTERISTICS All ratings are at TA = 25oC unless otherwise specified.
RATING
CONDITIONS
MIN TYP
MAX
UNIT
Peak Inverse Voltage (PIV) 1N5186 | SENSITRON SEMICONDUCTOR | rectifier |
3 | 1N5186 | FAST RECOVERY RECTIFIERS DIODES 1N5186-1N5190
High-reliability discrete products and engineering services since 1977
FAST RECOVERY RECTIFIERS DIODES
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), s | Digitron Semiconductors | rectifier |
4 | 1N5186 | Diode Switching 2-Pin GPR-4AM | New Jersey Semiconductor | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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Número de pieza | Descripción | Fabricantes | |
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