|
|
1N5552のメーカーはMicrosemiです、この部品の機能は「STANDARD RECOVERY GLASS RECTIFIERS」です。 |
部品番号 | 1N5552 |
| |
部品説明 | STANDARD RECOVERY GLASS RECTIFIERS | ||
メーカ | Microsemi | ||
ロゴ | |||
このページの下部にプレビューと1N5552ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
1N5550 thru 1N5554
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED STANDARD
RECOVERY GLASS RECTIFIERS
Qualified to MIL-PRF-19500/420
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. These industry-recognized 5.0 amp rated
rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed
with voidless-glass construction using an internal “Category 1” metallurgical bond. These
devices are also available in surface mount MELF package configurations. Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both through-
hole and surface mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5550 thru 1N5554 series.
• Voidless hermetically sealed glass package.
• Extremely robust construction.
• Quadruple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualified versions available per MIL-PRF-19500/420.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Standard recovery 5 amp 200 to 1000 volts rectifier series.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Extremely robust construction.
• Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS @ TA = 25 oC unless otherwise noted.
“B” Package
Also available in:
“B” SQ-MELF
(D-5B) Package
(surface mount)
1N5550US – 1N5554US
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead (1)
Thermal Impedance @ 10 ms heating time
Maximum Forward Surge Current (8.3 ms half sine)
Average Rectified Forward Current (1) @ TL = 30 oC
Average Rectified Forward Current (3) @ TA = 55 oC
@ TA = 100 oC
Working Peak Reverse Voltage
1N5550
1N5551
1N5552
1N5553
1N5554
Solder Temperature @ 10 s
See notes on next page.
Symbol
TJ and TSTG
R ӨJL
Z ӨJX
IFSM
I O(L)
I O2 (2)
I O3 (4)
V RWM
TSP
Value
-65 to +175
22
1.5
100
5
3
2
200
400
600
800
1000
260
Unit
oC
oC/W
oC/W
A
A
A
A
V
oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 1 of 6
1 Page 1N5550 thru 1N5554
ELECTRICAL CHARACTERISTICS @ TA = 25 oC unless otherwise noted.
TYPE
1N5550
1N5551
1N5552
1N5553
1N5554
MINIMUM
BREAKDOWN
VOLT AGE
V BR
IR @ 50 µA
Volts
220
440
660
880
1100
FORWARD VOLTAGE
V F @ IF = 9 A (pk)
MIN.
Volts
0.6 V (pk)
0.6 V (pk)
0.6 V (pk)
0.6 V (pk)
0.6 V (pk)
MAX.
Volts
1.2 V (pk)
1.2 V (pk)
1.2 V (pk)
1.3 V (pk)
1.3 V (pk)
MAXIMUM
REVERSE
CURRENT
IR @ V RWM
µA
1.0
1.0
1.0
1.0
1.0
REVERSE
RECOVERY
trr
(Note 1)
µs
2.0
2.0
2.0
2.0
2.0
NOTE 1: IF = 0.5 A, IRM = 1.0 A, IR(REC) = .250 A.
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 3 of 6
3Pages PACKAGE DIMENSIONS
1N5550 thru 1N5554
Dimensions
Ltr
Inch
Millimeters
Notes
Min Max Min Max
BD 0.115 0.180 2.92 4.57 3, 4
BL 0.130 0.300 3.30 7.62
4
LD 0.036 0.042 0.92 1.07
LL 0.900 1.300 22.86 33.02
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. The BL dimension shall include the entire body including slugs and sections of the lead over which the diameter
is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending
.050 inch (1.27 mm) onto the leads.
4. Dimension BD shall be measured at the largest diameter.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0230, Rev. 1 (111901)
©2011 Microsemi Corporation
Page 6 of 6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ 1N5552 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1N5550 | GLASS PASSIVATED JUNCTION RECTIFIER | General Semiconductor |
1N5550 | (1N5550 - 1N5554) HIGH CURRENT AXIAL LEAD RECTIFIERS | Sensitron |
1N5550 | (1N5550 - 1N5554) Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode | Semtech Corporation |
1N5550 | Diode Switching 200V 3A 2-Pin GPR-3A | New Jersey Semiconductor |