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MMBV2108LT1 の電気的特性と機能

MMBV2108LT1のメーカーはLRCです、この部品の機能は「Silicon Tuning Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMBV2108LT1
部品説明 Silicon Tuning Diode
メーカ LRC
ロゴ LRC ロゴ 




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MMBV2108LT1 Datasheet, MMBV2108LT1 PDF,ピン配置, 機能
LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance 10%
Complete Typical Design Curves
3
CATHODE
1
ANODE
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2106 MV2108
MV2109 MV2111
MV2115
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
MAXIMUM RATINGS(EACH DIODE)
SOT– 23 (TO–236AB)
Rating
Symbol MV21XX MMBV21XXLT1 Unit
Reverse Voltage
Forward Current
Forward power Dissipation @T A = 25°C
Derate above 25°C
VR
IF
PD
30
200
280 225
2.8 1.8
Vdc
mAdc
mW
mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
TJ
+150
°C
T stg –55 to +150 °C
MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H
MMBV2108LT1=4X
MMBV2105LT1=4U
MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic
Symbol Min Typ
Max
Unit
Reverse Breakdown Voltage
(IR=1.0µAdc)
Reverse Voltage Leakage Current
(VR=25Vdc,TA=25°C)
Diode Capacitance Temperature Coefficient
(VR=4.0Vdc,f=1.0MHz)
V (BR)R
IR
TCC
30 —
——
— 280
— Vdc
0.1 µAdc
— ppm/°C
MMBV2101~MMBV2109 –1/3
MV2101~MV2115

1 Page





MMBV2108LT1 pdf, ピン配列
LESHAN RADIO COMPANY, LTD.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
1000
500
200
100
50
20
10
5.0
MV2115
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
TYPICAL DEVICE CHARACTERISTICS
2.0
1.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
10
20 30
1.040
1.030
VR = 2.0 Vdc
1.020
1.010
VR = 4.0 Vdc
1.000
0.990
0.980
0.970
VR = 30 Vdc
NORMALIZED TO CT
at TA = 25°C
VR = (CURVE)
0.960
-75 -50 -25 0 +25 +50 +75 +100 +125
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
100
50 TA = 125°C
20
10
5.0
2.0 TA = 75°C
1.0
0.50
0.20 TA = 25°C
0.10
0.05
0.02
0.01 0 5.0 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus Reverse Bias
Voltage
5000
3000 MMBV2101LT1/MV2101
2000
MMBV2109LT1/MV2109
1000
500
300
200 MV2115
100
50
30
20
TA = 25°C
f = 50 MHz
10
1.0
2.0 3.0
5.0 7.0 10
20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Figure of Merit versus Reverse Voltage
5000
3000
2000
1000 MMBV2101LT1/MV2101
500
300
200
100
50
30
20
TA = 25°C
VR = 4.0 Vdc
10
10 20
MV2115
MMBV2109LT1/MV2109
30 50 70 100
f, FREQUENCY (MHz)
200 250
Figure 5. Figure of Merit versus Frequency
MMBV2101~MMBV2109 –3/3
MV2101~MV2115


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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
MMBV2108LT1

Silicon Tuning Diode

Motorola Semiconductors
Motorola Semiconductors
MMBV2108LT1

Silicon Tuning Diodes

ON
ON
MMBV2108LT1

Silicon Tuning Diode

LRC
LRC


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