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MMBTA63のメーカーはMotorola Semiconductorsです、この部品の機能は「DARLINGTON TRANSISTOR」です。 |
部品番号 | MMBTA63 |
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部品説明 | DARLINGTON TRANSISTOR | ||
メーカ | Motorola Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとMMBTA63ダウンロード(pdfファイル)リンクがあります。 Total 1 pages
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
V CES
vCBO
v EBO
c
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Ta = 25°C
Derate above 25°C
PD
Storage Temperature
Tstq
•Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
30
30
10
500
Max
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/X
°C
°c/w
MMBTA63
MMBTA64
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
DARLINGTON TRANSISTOR
PNP SILICON
Refer to MPSA75 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 100 /iAdc)
Collector Cutoff Current
(VCB = 30 Vdc >
Emitter Cutoff Current
(V B E = 10 Vdc)
ON CHARACTERISTICS
DC Current GainO)
c(l = 10 mAdc, Vqe = 5.0 Vdc)
c(l = 10 mAdc, Vce = 5.0 Vdc)
c(l = 100 mAdc, VC e = 5.0 Vdc)
c(l = 1000 mAdc, Vqe = 5.0 Vdc)
Collector-Emitter Saturation Voltage
OC = 100 mAdc, Ib = 0-1 mAdc)
Base-Emitter On Voltage
QC = 100 mAdc, Vce ' 5.0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
c(l = 10 mAdc, Vce = 50 Vdc, f = 100 MHz)
(1) Pulse Test: Pulse Width =s 300 ^s. Duty Cycle « 2.0%.
MMBTA63
MMBTA64
MMBTA63
MMBTA64
Symbol
V(BR)CES
!CBO
'EBO
hFE
VcE(sat)
v BE(on)
h
30
5,000
10,000
10,000
20,000
125
Max
100
nAdc
Vdc
Vdc
3-109
1 Page | |||
ページ | 合計 : 1 ページ | ||
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PDF ダウンロード | [ MMBTA63 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MMBTA63 | PNP Silicon Epitaxial Planar Transistor | SEMTECH |
MMBTA63 | PNP SURFACE MOUNT DARLINGTON TRANSISTOR | TRSYS |
MMBTA63 | PNP (DARLINGTON TRANSISTOR) | Samsung |
MMBTA63 | PNP SURFACE MOUNT DARLINGTON TRANSISTOR | Diodes Incorporated |