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1N6626 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 1N6626
部品説明 ULTRA FAST RECOVERY GLASS RECTIFIERS
メーカ Microsemi
ロゴ Microsemi ロゴ 



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1N6626 Datasheet, 1N6626 PDF,ピン配置, 機能
SCOTTSDALE DIVISION
1N6626 thru 1N6631
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/590 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
APPEARANCE
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N6626 to 1N6631 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/590
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g. SP6626,
SP6629, etc.
Surface mount equivalents also available in a square end-
cap MELF configuration with “US” suffix (see separate
data sheet for 1N6626US thru 1N6631US)
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Junction Temperature: -65oC to +150oC
Storage Temperature: -65oC to +175oC
Peak Forward Surge Current @ 25oC: 75A (except
1N6631 which is 60A)
Note: Test pulse = 8.3ms, half-sine wave.
Average Rectified Forward Current (IO) at TL= +75oC
(L=.375 inch from body):
1N6626 thru 1N6628
2.3 A
1N6629 thru 1N6631
1.8 A
(Derate IO linearly at 1.0%/oC for TL> +75oC)
Average Rectified Forward Current (IO) at TA=25oC:
1N6626 thru 1N6628
1.75 A
1N6629 thru 1N6631
1.40 A
(Derate IO linearly at 0.80%/ oC for TA>+25oC. This IO
rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled
where TJ(max) is not exceeded. See MIL-PRF-19500/590)
Thermal Resistance L= 0.375 inch (RθJL): 22oC/W
Capacitance at VR= 10 V: 40 pF
Solder temperature: 260oC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper.
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
See package dimensions on last page
Copyright © 2009
10-01-2009 REV F; SA7-57.pdf
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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