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1N6622US PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 1N6622US
部品説明 SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS
メーカ Microsemi
ロゴ Microsemi ロゴ 



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1N6622US Datasheet, 1N6622US PDF,ピン配置, 機能
SCOTTSDALE DIVISION
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS RECTIFIERS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
Package “A”
or D-5A
FEATURES
Surface mount series equivalent to the JEDEC
registered 1N6620 to 1N6625 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g.
SP6620US, SP6624US, etc.
Axial-leaded equivalents also available (see separate
data sheet for 1N6620 thru 1N6625)
MAXIMUM RATINGS
Junction Temperature: -65oC to +175oC
Storage Temperature: -65oC to +175oC
Peak Forward Surge Current @ 25oC: 20 Amps (except
1N6625 which is 15 Amps)
Note: Test pulse = 8.3 ms, half-sine wave.
Average Rectified Forward Current (IO) at TEC=+110oC:
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 1.5%/oC for TEC > +110oC)
Average Rectified Forward Current (IO) at TA=25oC:
1N6620 thru 1N6622: 1.2 Amps
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO
rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled
where TJ(max) is not exceeded.)
Thermal Resistance junction to endcap (RθJEC): 20oC/W
Capacitance at VR= 10 V: 10 pF
Solder temperature: 260oC for 10 s (maximum)
APPLICATIONS / BENEFITS
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead plating.
MARKING: Cathode band only
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-481-B
Weight: 193 mg
See package dimensions and recommended pad
layout on last page
Copyright © 2008
06-25-2008 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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