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Datasheet 1N6625 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6625 | Ultra Fast Recovery Rectifier Diode POWER DISCRETES Description
Quick reference data
V = 200 - 1000V R
IF = 1.5 - 2.0 A trr = 30 - 60ns V = 1.6 -1.95V
F
1N6620 THRU 1N6625 Axial Leaded Hermetically Sealed Ultra Fast Recovery Rectifier Diode
Features
Low reverse leakage current Hermetically sealed in fused metal oxide Good thermal sho |  SEMTECH | rectifier |
| 2 | 1N6625 | ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION
1N6620 thru 1N6625
VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
WWW.Microsemi .COM
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure can |  Microsemi | rectifier |
| 3 | 1N6625 | ULTRA FAST RECTIFIERS 1N6620-1N6625
High-reliability discrete products and engineering services since 1977
ULTRA FAST RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, a |  Digitron Semiconductors | rectifier |
| 4 | 1N6625US | SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS
WWW.Microsemi .COM
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications wh | Microsemi | rectifier |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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