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1N6629のメーカーはDigitron Semiconductorsです、この部品の機能は「ULTRA FAST RECTIFIERS」です。 |
部品番号 | 1N6629 |
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部品説明 | ULTRA FAST RECTIFIERS | ||
メーカ | Digitron Semiconductors | ||
ロゴ | |||
このページの下部にプレビューと1N6629ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
1N6626-1N6631
High-reliability discrete products
and engineering services since 1977
ULTRA FAST RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Value
Junction temperature
-65° to 150°C
Storage temperature
Peak forward surge current @ 25°C (1)
1N6626-1N6630
1N6631
Average rectified forward current @ TL = 75°C(2)
1N6626-1N6628
1N6629-1N6631
Average rectified forward current at TA = 25°C(3)
1N6626-1N6628
1N6629-1N6631
-65° to 175°C
75A
60A
2.3A
1.8A
1.75A
1.40A
Thermal resistance L = 0.375”
22°C/W
Capacitance at VR = 10V
40pF
Solder temperature
260°C for 10 s maximum
Note 1: Test pulse = 8.3 ms, half-sine wave.
Note 2: Derate linearly at 1.0%/°C for TL > 75°.
Note 3: Derate linearly at 0.80%/°C for TA > 25°C. This is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) is not exceeded.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part
number
Working
peak
reverse
voltage
VRWM
V
Minimum
breakdown
voltage
VR
IR = 50μA
V
Max forward voltage
VF @ IF
V@A
V@A
Maximum reverse
current
IR @ VRWM
TA=25°C
μA
TA=150°C
μA
Maximum
reverse
recovery
time
(low
current) (1)
trr
ns
Maximum
reverse
recovery
time
(high
current)(2)
trr
ns
Peak
Recovery
Current (2)
IRM (rec)
IF = 2A
100A/μS
A
1N6626
200
220
2.0
500
30
45 3.5
1N6627
400
440
2.0
500
30
45 3.5
1N6628
600
660
2.0
500
30
45 3.5
1N6629
800
880
2.0
500
50
60 4.2
1N6630
900
990
2.0
500
50
60 4.2
1N6631
1000
1100
4.0
Note 1: Low Current Reverse Recovery Time Test Conditions IF = 0.5A, IRM = 1.0A, IR(REC) = 0.25A.
Note 2: High Current Reverse Recovery Time Test Conditions IF = 2.0A, 100A/µs, MIL-STD-750, METHOD 4031, CONDITION D.
600
60
80 5.0
Maximum
forward
Recovery
Voltage
VFRM
IF = 0.5A
tr = 12ns
V
8
8
8
12
12
20
Rev. 20131216
1 Page High-reliability discrete products
and engineering services since 1977
1N6626-1N6631
ULTRA FAST RECTIFIERS
Rev. 20131216
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ 1N6629 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1N662 | COMPUTER DIODE Switching | Microsemi Corporation |
1N662 | Diode Switching 80V 0.15A 2-Pin DO-35 | New Jersey Semiconductor |
1N6620 | ULTRA FAST RECTIFIERS | Digitron Semiconductors |
1N6620 | Ultra Fast Recovery Rectifier Diode | SEMTECH |