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1N6643 の電気的特性と機能

1N6643のメーカーはMicrosemiです、この部品の機能は「SWITCHING DIODES」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N6643
部品説明 SWITCHING DIODES
メーカ Microsemi
ロゴ Microsemi ロゴ 




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1N6643 Datasheet, 1N6643 PDF,ピン配置, 機能
1N6638, 1N6642, 1N6643
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED
SWITCHING DIODES
Qualified per MIL-PRF-19500/578
DESCRIPTION
These popular JEDEC registered switching/signal diodes are military qualified and available
with internal metallurgical bonded construction. These small low capacitance diodes with very
fast switching speeds are hermetically sealed and bonded into a “D” package. They may be
used in a variety of fast switching applications including computers and peripheral equipment
such as magnetic cores, thin-film memories, plated-wire memories, as well as decoding or
encoding applications, etc. Microsemi also offers a variety of other switching/signal diodes.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 1N6638, 1N6642, and 1N6643.
Ultra fast recovery time.
Very low capacitance.
Metallurgically bonded.
Non-cavity glass package.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/578.
Replacements for 1N4148, 1N4148-1, 1N4150, 1N4150-1, and 1N914.
RoHS compliant devices available (commercial grade only).
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
“D” Package
APPLICATIONS / BENEFITS
Small size for high density mounting using flexible thru-hole leads (see package illustration).
Ideal for:
High frequency data lines
RS-232 & RS–422 Interface Networks
Ethernet 10 Base T
Switching core drivers
LAN
Computers
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
Also available in:
“B” SQ MELF or
D-5B Package
(surface mount)
1N6638US_42US_43US
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temp
Thermal Resistance Junction-to-Lead = 0.375 inch (1)
Thermal Resistance Junction-to-Ambient (1)
Peak Forward Surge Current @ TA = +25 oC
(Test pulse = 8.3 ms, half-sine wave.)
Average Rectified Forward Current @ TA = +75 oC
(Derate at 3.0 mA/oC above TL = +75 oC @ L = 3/8”)
TJ and TSTG
R ӨJL
R ӨJA
IFSM
-65 to +175
150
250
2.5
oC
oC/W
oC/W
A
IO 300 mA
Breakdown Voltage:
1N6638
1N6642
V BR
150 V
100
1N6643
75
Working Peak Reverse Voltage:
1N6638
V RWM
125 V
1N6642
75
1N6643
50
NOT ES:
1. T A = +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch
(25.4 mm) long, lead length L ≤ .187 inch (≤ 4.75 mm); R ΘJA with a defined PCB thermal resistance
condition included, is measured at IO = 300 mA.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0218, Rev. 1 (111513)
©2011 Microsemi Corporation
Page 1 of 5

1 Page





1N6643 pdf, ピン配列
GRAPHS
1N6638, 1N6642, 1N6643
TA (oC) Ambient Temperature
FIGURE 1
Temperature – Current Derating
T4-LDS-0218, Rev. 1 (111513)
Time (s)
FIGURE 2
Maximum Thermal Impedance at TA = 55 oC
©2011 Microsemi Corporation
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共有リンク

Link :


部品番号部品説明メーカ
1N6640

300 mAmp 75-100 Volts 4 nsec Computer Switching Diode

Microsemi Corporation
Microsemi Corporation
1N6640

SWITCHING DIODES

Compensated Deuices Incorporated
Compensated Deuices Incorporated
1N6640

Switching Diodes

Aeroflex
Aeroflex
1N6640

SWITCHING / SIGNAL DIODES

SENSITRON SEMICONDUCTOR
SENSITRON SEMICONDUCTOR


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