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PDF 1N6642 Data sheet ( Hoja de datos )
| Número de pieza | 1N6642 | |
| Descripción | SWITCHING DIODES | |
| Fabricantes | Microsemi | |
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1N6638, 1N6642, 1N6643
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED
SWITCHING DIODES
Qualified per MIL-PRF-19500/578
DESCRIPTION
These popular JEDEC registered switching/signal diodes are military qualified and available
with internal metallurgical bonded construction. These small low capacitance diodes with very
fast switching speeds are hermetically sealed and bonded into a “D” package. They may be
used in a variety of fast switching applications including computers and peripheral equipment
such as magnetic cores, thin-film memories, plated-wire memories, as well as decoding or
encoding applications, etc. Microsemi also offers a variety of other switching/signal diodes.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N6638, 1N6642, and 1N6643.
• Ultra fast recovery time.
• Very low capacitance.
• Metallurgically bonded.
• Non-cavity glass package.
• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/578.
• Replacements for 1N4148, 1N4148-1, 1N4150, 1N4150-1, and 1N914.
• RoHS compliant devices available (commercial grade only).
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
“D” Package
APPLICATIONS / BENEFITS
• Small size for high density mounting using flexible thru-hole leads (see package illustration).
• Ideal for:
High frequency data lines
RS-232 & RS–422 Interface Networks
Ethernet 10 Base T
Switching core drivers
LAN
Computers
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
Also available in:
“B” SQ MELF or
D-5B Package
(surface mount)
1N6638US_42US_43US
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temp
Thermal Resistance Junction-to-Lead = 0.375 inch (1)
Thermal Resistance Junction-to-Ambient (1)
Peak Forward Surge Current @ TA = +25 oC
(Test pulse = 8.3 ms, half-sine wave.)
Average Rectified Forward Current @ TA = +75 oC
(Derate at 3.0 mA/oC above TL = +75 oC @ L = 3/8”)
TJ and TSTG
R ӨJL
R ӨJA
IFSM
-65 to +175
150
250
2.5
oC
oC/W
oC/W
A
IO 300 mA
Breakdown Voltage:
1N6638
1N6642
V BR
150 V
100
1N6643
75
Working Peak Reverse Voltage:
1N6638
V RWM
125 V
1N6642
75
1N6643
50
NOT ES:
1. T A = +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch
(25.4 mm) long, lead length L ≤ .187 inch (≤ 4.75 mm); R ΘJA with a defined PCB thermal resistance
condition included, is measured at IO = 300 mA.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0218, Rev. 1 (111513)
©2011 Microsemi Corporation
Page 1 of 5
1 page  
1N6638, 1N6642, 1N6643
PACKAGE DIMENSIONS
INCH
MILLIMET ERS
DIM MIN MAX MIN MAX NOTES
BD 0.056 0.080 1.42
2.03
2
BL 0.130 0.180 3.30
4.57
LD 0.018 0.022 0.46
0.56
3
LL 1.00 1.50 25.40 38.10
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Dimension BD shall be measured at the largest diameter.
3. The specified lead diameter applies in the zone between .050 inch (1.27 mm) from the diode body to the end of the lead. Outside of
this zone lead shall not exceed BD.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0218, Rev. 1 (111513)
©2011 Microsemi Corporation
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 1N6642.PDF ] | |
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