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PDF 1N6642US Data sheet ( Hoja de datos )
| Número de pieza | 1N6642US | |
| Descripción | SWITCHING DIODES | |
| Fabricantes | Microsemi | |
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1N6638US, 1N6642US, 1N6643US
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED
SWITCHING DIODES
Qualified per MIL-PRF-19500/578
DESCRIPTION
This popular surface mount equivalent JEDEC registered switching/signal diodes are military
qualified and available with internal metallurgical bonded construction. These small low
capacitance diodes with very fast switching speeds are hermetically sealed and bonded into a
“D-5B” package. They may be used in a variety of fast switching applications including
computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire
memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety
of other switching/signal diodes.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered surface mount equivalents of 1N6638, 1N6642, and 1N6643.
• Ultra fast recovery time.
• Very low capacitance.
• Metallurgically bonded.
• Non-cavity glass package.
• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/578.
• Replacements for 1N4148UR, 1N4148UR-1, 1N4150UR-1, and 1N914UR.
• RoHS compliant devices available (commercial grade only).
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
“B” SQ-MELF
(D-5B) Package
Also available in:
“D” Package
(axial-leaded)
1N6638_42_43
APPLICATIONS / BENEFITS
• Small size for high density mounting (see package illustration).
• Ideal for:
High frequency data lines
RS-232 & RS–422 Interface Networks
Ethernet: 10 Base T
Switching core drivers
LAN
Computers
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temp
Thermal Resistance Junction-to-End Cap
Thermal Resistance Junction-to-Ambient (1)
Peak Forward Surge Current @ TA = +25 oC
(Test pulse = 8.3 ms, half-sine wave.)
Average Rectified Forward Current @ TA = +75 oC
(Derate at 4.6 mA/°C Above TEC = + 110 °C)
TJ and TSTG
RӨJEC
RӨJA
IFSM
-65 to +175
40
250
2.5
oC
oC/W
oC/W
A
IO 300 mA
Breakdown Voltage:
1N6638US
1N6642US
VBR
150 V
100
1N6643US
75
Working Peak Reverse Voltage:
1N6638US
1N6642US
VRWM
125 V
75
1N6643US
50
NOTES: 1. TA = +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads for US = .061 inch (1.55 mm) x .105 inch (2.67 mm); RΘJA with a defined PCB
thermal resistance condition included, is measured at IO = 300 mA.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0218-1, Rev. 1 (111513)
©2011 Microsemi Corporation
Page 1 of 5
1 page  
1N6638US, 1N6642US, 1N6643US
PACKAGE DIMENSIONS
DIM
BD
ECT
BL
S
INCH
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003 MIN.
MILLIMETERS
MIN MAX
1.78 2.16
0.48 0.71
4.19 4.95
0.08 MIN.
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Dimensions are pre-solder dip.
3. U-suffix parts are structurally identical to the US-suffix parts.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0218-1, Rev. 1 (111513)
©2011 Microsemi Corporation
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 1N6642US.PDF ] | |
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