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PDF 2N3819 Data sheet ( Hoja de datos )
| Número de pieza | 2N3819 | |
| Descripción | N-Channel JFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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N-Channel JFET
2N3819
Vishay Siliconix
PRODUCT SUMMARY
VGS(off) (V)
v –8
V(BR)GSS Min (V)
–25
gfs Min (mS)
2
IDSS Min (mA)
2
FEATURES
D Excellent High-Frequency Gain:
Gps 11 dB @ 400 MHz
D Very Low Noise: 3 dB @ 400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see
Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
TO-226AA
(TO-92)
S1
G2
D3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
www.vishay.com
7-1
1 page  
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Input Admittance
100
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bis
Forward Admittance
100
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
10 10
gis gfs
–bis
11
0.1
100
200 500
f – Frequency (MHz)
Reverse Admittance
10 TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
–brs
1
1000
–grs
0.1
0.1
100
200 500
f – Frequency (MHz)
Output Admittance
10
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bos
1
gos
1000
0.1
0.01
100
200 500
f – Frequency (MHz)
1000
Equivalent Input Noise Voltage vs. Frequency
20
VGS(off) = –3 V
VDS = 10 V
16
12
8
4
0
10
ID = IDSS
ID = 5 mA
100 1 k 10 k
f – Frequency (Hz)
100 k
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
0.01
100
200 500
f – Frequency (MHz)
1000
Output Conductance vs. Drain Current
20
VGS(off) = –3 V
VDS = 10 V
f = 1 kHz
16
TA = –55_C
12
8
125_C
25_C
4
0
0.1 1 10
ID – Drain Current (mA)
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7-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N3819.PDF ] | |
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