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Número de pieza | 1N5612 | |
Descripción | Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors | |
Fabricantes | Microsemi | |
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Available on
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versions
Voidless Hermetically Sealed Unidirectional
Transient Voltage Suppressors
Qualified per MIL-PRF-19500/434
DESCRIPTION
This series of industry recognized voidless hermetically sealed unidirectional Transient
Voltage Suppressor (TVS) designs is military qualified and are ideal for high-reliability
applications where a failure cannot be tolerated. They provide a Working Peak “Standoff”
Voltage selection from 30.5 to 175 volts with 1500 watt ratings. They are very robust in hard-
glass construction and also use an internal metallurgical bond identified as “Category 1” for
high reliability applications. These devices are also available in a surface mount MELF
package configuration as a special order. Microsemi also offers numerous other TVS
products to meet higher and lower peak pulse power and voltage ratings in both through-hole
and surface-mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
• Triple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• Voidless hermetically sealed glass package.
• JAN, JANTX, and JANTXV military qualifications available per MIL-PRF-19500/434.
• Further options for screening in accordance with MIL-PRF-19500 for JANS equivalent level by
using a “SP” prefix.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Military and other high reliability transient protection.
• Extremely robust construction.
• Working Peak “Standoff” Voltage (VWM) from 30.5 to 175 V.
• Available as 1500 watt Peak Pulse Power (PPP).
• ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
• Secondary lightning protection per select levels in IEC61000-4-5.
• Flexible axial-leaded mounting terminals.
• Non-sensitive to ESD per MIL-STD-750 method 1020.
• Inherently radiation hard as described in Microsemi “MicroNote 050”.
Qualified Levels:
JAN, JANTX, and
JANTXV
“G” Package
Also available by
Special order:
MELF Surface Mount
MAXIMUM RATINGS @ TA = 25 oC unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Peak Pulse Power @ tp = 1.0 ms
Rated Forward Surge Current @ tp = 8.33 ms
Impulse repetition rate (duty factor)
Steady-State Power (1) (Figure 4)
Solder Temperature @ 10 s
Symbol
TJ and TSTG
P PP
IFSM
IPP
PD
TSP
Value
-55 to +175
1500
150
0.01
3.0
260
Unit
oC
W
A (pk)
%
W
oC
Notes: 1. Derate at 20 mW/oC above T A = +25 oC. Steady-state power ratings with reference to ambient are for PC
boards where thermal resistance from mounting point to ambient is sufficiently controlled where T J(MAX)
is not exceeded.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0241, Rev. 1 (112023)
©2011 Microsemi Corporation
Page 1 of 4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 1N5612.PDF ] |
Número de pieza | Descripción | Fabricantes |
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1N5611 | Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors | Microsemi |
1N5611 | Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin Case G | New Jersey Semiconductor |
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