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Datasheet 2N3819 PDF ( 特性, スペック, ピン接続図 )

部品番号 2N3819
部品説明 N-Channel JFET
メーカ TEMIC
ロゴ TEMIC ロゴ 
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2N3819 Datasheet, 2N3819 PDF,ピン配置, 機能
N-Channel JFET
Product Summary
VGS(off) (V)
v –8
V(BR)GSS Min (V)
–25
gfs Min (mS)
2
IDSS Min (mA)
2
2N3819
Features
D Excellent High-Frequency Gain:
Gps 11 dB @ 400 MHz
D Very Low Noise: 3 dB @ 400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
Benefits
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
Applications
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
Description
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see Packaging
Information). For similar products in TO-206AF (TO-72) and
TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
TO-226AA
(TO-92)
S1
G2
D3
Top View
Absolute Maximum Ratings
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70238.
Siliconix
S-52424—Rev. C, 14-Apr-97
1

1 Page



2N3819 pdf, ピン配列
Typical Characteristics (Cont’d)
100 nA
10 nA
1 nA
Gate Leakage Current
5 mA
1 mA
0.1 mA
TA = 125_C
100 pA
10 pA
1 pA
5 mA
TA = 25_C
IGSS @
125_C
1 mA
0.1 mA
IGSS @ 25_C
0.1 pA
0
10
VDG – Drain-Gate Voltage (V)
20
Output Characteristics
10
VGS(off) = –2 V
8
VGS = 0 V
6 –0.2 V
–0.4 V
4 –0.6 V
–0.8 V
2 –1.0 V
–1.2 V
0 –1.4 V
0 2 4 6 8 10
VDS – Drain-Source Voltage (V)
Transfer Characteristics
10
VGS(off) = –2 V
VDS = 10 V
8
TA = –55_C
6 25_C
4 125_C
2
0
0 –0.4 –0.8 –1.2 –1.6
VGS – Gate-Source Voltage (V)
Siliconix
S-52424—Rev. C, 14-Apr-97
–2
2N3819
Common-Source Forward Transconductance
vs. Drain Current
10
VGS(off) = –3 V
8
VDS = 10 V
f = 1 kHz
TA = –55_C
6
25_C
4
125_C
2
0
0.1 1
ID – Drain Current (mA)
10
15
12
9
6
3
0
0
Output Characteristics
VGS(off) = –3 V
VGS = 0 V
–0.3 V
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
246 8
VDS – Drain-Source Voltage (V)
10
Transfer Characteristics
10
VGS(off) = –3 V
VDS = 10 V
8
TA = –55_C
6
125_C
25_C
4
2
0
0 –0.6 –1.2 –1.8 –2.4 –3
VGS – Gate-Source Voltage (V)
3


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