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2N3819 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2N3819
部品説明 N-Channel JFET
メーカ TEMIC
ロゴ TEMIC ロゴ 

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2N3819 Datasheet, 2N3819 PDF,ピン配置, 機能
N-Channel JFET
Product Summary
VGS(off) (V)
v –8
V(BR)GSS Min (V)
–25
gfs Min (mS)
2
IDSS Min (mA)
2
2N3819
Features
D Excellent High-Frequency Gain:
Gps 11 dB @ 400 MHz
D Very Low Noise: 3 dB @ 400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
Benefits
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
Applications
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
Description
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see Packaging
Information). For similar products in TO-206AF (TO-72) and
TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
TO-226AA
(TO-92)
S1
G2
D3
Top View
Absolute Maximum Ratings
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70238.
Siliconix
S-52424—Rev. C, 14-Apr-97
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