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Datasheet 1N5059 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5059 | Plastic Silicon Rectifier 1N5059-1N5062
Plastic Silicon Rectifier
VOLTAGE RANGE: 200---800 V CURRENT: 2.0 A
Features
Low cost Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand and s im ilar s olvents
DO - 15
Mechanical Data
Cas e: JE | LGE | rectifier |
2 | 1N5059 | GLASS PASSIVATED SILICON RECTIFIERS 1N5059 1N5061 1N5060 1N5062 GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT
GPR-1A CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for | Central Semiconductor | rectifier |
3 | 1N5059 | STANDARD AVALANCHE DIODE 1N5059-1N5062
High-reliability discrete products and engineering services since 1977
STANDARD AVALANCHE DIODE
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard | Digitron Semiconductors | diode |
4 | 1N5059 | Passivated Rectifier | Powerex Power Semiconductors | rectifier |
5 | 1N5059 | Standard Avalanche Sinterglass Diode www.vishay.com
1N5059, 1N5060, 1N5061, 1N5062
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
949539
MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 m | Vishay Telefunken | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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