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PDF 1N5059 Data sheet ( Hoja de datos )
| Número de pieza | 1N5059 | |
| Descripción | STANDARD AVALANCHE DIODE | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N5059 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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1N5059-1N5062
High-reliability discrete products
and engineering services since 1977
STANDARD AVALANCHE DIODE
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Parameter
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Average forward current
Junction and storage temperature range
Maximum pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Junction ambient
Test condition
tp = 10ms, half sinewave
RthJA = 45 K/W, Tamb = 50°C
RthJA = 100 K/W, Tamb = 75°C
I(BR)R = 1 A, inductive load
Lead length l = 10mm,
TL = constant
On PC board with spacing 25
mm
Sub type
1N5059
1N5060
1N5061
1N5062
Symbol
VR = VRRM
IFSM
IFAV
TJ, Tstg
ER
RthJA
Value
200
400
600
800
50
2
0.8
-55 to +175
20
45
100
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Test condition
Forward voltage
IF = 1A
IF = 2.5A
VR = VRRM
Reverse current
VR = VRRM, TJ = 100°C
VR = VRRM, TJ = 150°C
Reverse breakdown voltage
IR = 100µA
Reverse recovery time
Diode capacitance
IF = 0.5A, IR = 1A, IR = 0.25A
VR = 0 V, f = 1 MHz
Sub type
1N5059
1N5060
1N5061
1N5062
Symbol Min Typ
VF
IR
225
V(BR)R
450
650
900
trr
CD 40
Max
1
1.15
1
10
100
1600
4
Unit
V
A
A
°C
mJ
K/W
Unit
V
µA
V
µs
pF
Rev. 20100122
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1N5059.PDF ] | |
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