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Datasheet 1N6310 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6310 | Small Signal Zener Diodes ES Components
1N6309 – 1N6345 Family Bare Die
DATA SHEET
Small Signal Zener Diodes
Wire Bondable, Epoxy Attach Bare Die
Rev: B
FEATURES
• Wafer fab by Vishay Semiconductor • Silicon planar Zener diode
MECHANICAL DATA
Top Metal ( Anode )
Back Metal ( Cathode )
Passivation
AlSi AuSb Nitri |  ES Components | diode |
| 2 | 1N6310 | 500mW GLASS ZENER DIODES DIGITRON SEMICONDUCTORS
1N6309 – 1N6355D
500 mW GLASS ZENER DIODES
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Junction and storage temperature range
TJ, Tstg
-65 to +175
°C
Thermal resistance, junction to lead(1)
1N6309-1N6320
1N6321-1N6355
RӨJL
150 95.5
°C/W
Thermal resistance, ju |  Digitron Semiconductors | diode |
| 3 | 1N6310 | 500mW GLASS ZENER DIODES 1N6309 thru 1N6355D
Available on commercial
versions
VOIDLESS HERMETICALLY SEALED 500mW GLASS ZENER DIODES
Qualified per MIL-PRF-19500/533
DESCRIPTION
This Zener voltage regulator series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. Thes |  Microsemi | diode |
| 4 | 1N6310 | 500 mW ZENER DIODES • AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/533 • 500 mW ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED
1N6309 THRU 1N6320
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Dissapation: 500 mW @ TL=+75° |  Compensated Deuices Incorporated | diode |
| 5 | 1N6310 | Diode Zener Single 2.7V 5% 500mW 2-Pin DO-35 |  New Jersey Semiconductor | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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