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Datasheet 1N6006B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6006B | SILICON ZENER DIODES 1N5985B THRU 1N6020B
SILICON ZENER DIODES 500mW, 2.4 THRU 68 VOLTS
5% TOLERANCE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5985B series are high quality silicon Zener diodes designed for low leakage applications.
DO-35 CASE
MAXIMUM RATINGS: (TL=50°C) Power Diss |  Central Semiconductor | diode |
| 2 | 1N6006B | 500 mW Zener Diode NOT RECOMMENDED FOR NEW DESIGNS
MCC
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Micro Commercial Components
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Features
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information)
x |  MCC | diode |
| 3 | 1N6006B | Zener Diode, Rectifier Zeners 1N5985B - 1N6025B
Zeners 1N5985B - 1N6025B
Absolute Maximum Ratings *
Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG Operating and Storage Temperature Range
TA = 25°C unless otherwise noted
Tolerance = 5%
Units mW mW/°C °C
Value 50 |  Fairchild Semiconductor | diode |
| 4 | 1N6006B | Diode Zener Single 18V 5% 500mW 2-Pin DO-35 |  New Jersey Semiconductor | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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