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What is 1N5941B?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "Zener Voltage Regulators".


1N5941B Datasheet PDF - ON Semiconductor

Part Number 1N5941B
Description Zener Voltage Regulators
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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1N5913B Series
3 W DO−41 Surmetict 30
Zener Voltage Regulators
This is a complete series of 3 W Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon−oxide passivated junctions. All this in an axial−lead,
transfer−molded plastic package that offers protection in all common
environmental conditions.
Features
Zener Voltage Range − 3.3 V to 200 V
ESD Rating of Class 3 (>16 KV) per Human Body Model
Surge Rating of 98 W @ 1 ms
Maximum Limits Guaranteed on up to Six Electrical Parameters
Package No Larger than the Conventional 1 W Package
Pb−Free Packages are Available
Mechanical Characteristics
CASE: Void free, transfer−molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
260°C, 1/16from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Max. Steady State Power Dissipation
@ TL = 75°C, Lead Length = 3/8
Derate above 75°C
PD
3W
24 mW/°C
Steady State Power Dissipation
@ TA = 50°C
Derate above 50°C
PD 1 W
6.67 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg
−65 to
+200
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
Cathode
Anode
AXIAL LEAD
CASE 59
PLASTIC
STYLE 1
MARKING DIAGRAM
A
1N
59xxB
YYWWG
G
A = Assembly Location
1N59xxB = Device Number
YY = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
1N59xxB, G
Package
Axial Lead
(Pb−Free)
Shipping
2000 Units/Box
1N59xxBRL, G Axial Lead 6000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 5
1
Publication Order Number:
1N5913B/D

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1N5941B equivalent
1N5913B Series
APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = qLA PD + TA
qLA is the lead-to-ambient thermal resistance (°C/W) and
PD is the power dissipation. The value for qLA will vary and
depends on the device mounting method. qLA is generally
30−40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + DTJL
DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
DTJL = qJL PD
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ
qVZ, the zener voltage temperature coefficient, is found
from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 3 be exceeded.
http://onsemi.com
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