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Datasheet 1N5946B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N5946B | Zener Voltage Regulators
1N5913B Series
3 W DO−41 Surmetict 30 Zener Voltage Regulators
This is a complete series of 3 W Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon−oxide passivated junctions. All this in an axial−lead, transf | ON Semiconductor | regulator |
2 | 1N5946B | Zener Voltage Regulator Diodes MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
1 to 3 Watt DO-41 Surmetic 30 Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP
1 to 3 Watt Surmetic 30 Silicon Zener Diodes
. . . a complete series of 1 to 3 Watt Zener Diodes with limits and operating characteristics that refle | Motorola Semiconductors | diode |
3 | 1N5946B | Diode, Rectifier | American Microsemiconductor | diode |
4 | 1N5946B | SILICON ZENER DIODES www.eicsemi.com
1N5913B - 1N5956B
VZ : 3.3 - 200 Volts PD : 1.5 Watts
FEATURES :
* Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free
MECHANICAL DATA
* Case : DO-41 Molded plastic * Epoxy : UL94V-0 rate flame retard | EIC | diode |
5 | 1N5946B | 3W SILICON ZENER DIODES 1N5913B...1N5956B
3 W SILICON ZENER DIODES
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Steady State Power Dissipation at TL = 75 OC, Lead Length = 3/8" Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 200 mA
Max. 0.7
Max. 2. | SEMTECH | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re Unisonic Technologies mosfet | | |
4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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