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PDF MPQ3725 Data sheet ( Hoja de datos )
| Número de pieza | MPQ3725 | |
| Descripción | Quad Core Driver Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Core Driver Transistor
NPN Silicon
14 13 12 11 10 9 8
NPN
1234567
MPQ3725
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCES
VEBO
IC
40
60
5.0
1.0
One
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
1.0
8.0
2.5 Watts
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Effective
One For Four
Transistor Transistors
Thermal Resistance,
Junction to Ambient(1)
RqJA
125
50 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
v v1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Min
40
60
5.0
—
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 0.5 mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
2–482
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPQ3725.PDF ] | |
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