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PDF MPQ3467 Data sheet ( Hoja de datos )
| Número de pieza | MPQ3467 | |
| Descripción | Quad Memory Driver Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Memory Driver
Transistor
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
–40
–40
–5.0
–1.0
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
Adc
Total Device Dissipation
@ TA = 25°C(1)
Derate above 25°C
PD
650
5.2
1500
12
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.25
10
3.2 Watts
25.6 mW/°C
Operating and Storage Junction TJ, Tstg
Temperature Range
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
RqJC
Junction
to Case
RqJA
Junction
to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
100 193 °C/W
39 83.2 °C/W
Coupling Factors
Q1–Q4 or Q2–Q3
45
55 %
Q1–Q2 or Q3–Q4
5.0
10
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
–40
–40
–5.0
—
—
v v1. Second Breakdown occurs at power levels greater than 2 times the power dissipation rating.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MPQ3467
Motorola Preferred Device
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
—
–200
nAdc
—
–200
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–479
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MPQ3467.PDF ] | |
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