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PDF MPSH81 Data sheet ( Hoja de datos )
| Número de pieza | MPSH81 | |
| Descripción | RF Amplifier Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MPSH81 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
RF Amplifier Transistor
PNP Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
PD
–20 Vdc
–20 Vdc
–3.0 Vdc
350 mW
2.81 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –2.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
–20
–20
–3.0
—
—
MPSH81
Motorola Preferred Device
1
23
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
—
–100
nAdc
—
–100
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–673
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MPSH81.PDF ] | |
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