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PDF MMBV609LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBV609LT1 | |
| Descripción | Silicon Tuning Diode | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and tuning, or any
top–of–the–line application requiring back–to–back diode configuration for minimum
signal distortion and detuning. This device is supplied in the SOT–23 plastic package
for high volume, pick and place assembly requirements.
• High Figure of Merit Q = 450 (Typ) @ VR = 3.0 Vdc, f = 50 MHz
• Guaranteed Capacitance Range
• Dual Diodes – Save Space and Reduce Cost
• Surface Mount Package
• Available in 8 mm Tape and Reel
• Monolithic Chip Provides Improved Matching
• Hyper Abrupt Junction Process Provides High Tuning Ratio
12 3
MMBV609LT1
Motorola Preferred Device
DUAL
VOLTAGE VARIABLE
CAPACITANCE DIODE
3
1
2
CASE 318 – 08, STYLE 9
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Current
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VR 20 Vdc
IF 100 mAdc
PD 225 mW
1.8 mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
TJ +125
Tstg – 55 to +125
°C
°C
MMBV609LT1 = 5L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
Diode Capacitance
(VR = 3.0 Vdc, f = 1.0 MHz)
Capacitance Ratio C3/C8
(f = 1.0 MHz)
V(BR)R
20
—
— Vdc
IR — — 10 nAdc
CT 26 — 32 pF
CR 1.8 — 2.4 —
Figure of Merit
(VR = 3.0 Vdc, f = 50 MHz)
Q
250 450
—
—
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–131
1 page | ||
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| PDF Descargar | [ Datasheet MMBV609LT1.PDF ] | |
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