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MMAD1109 の電気的特性と機能

MMAD1109のメーカーはMotorola Semiconductorsです、この部品の機能は「Monolithic Diode Arrays」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMAD1109
部品説明 Monolithic Diode Arrays
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




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MMAD1109 Datasheet, MMAD1109 PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMAD130/D
Monolithic Diode Arrays
Surface Mount Diode Arrays
These diode arrays are multiple diode junctions fabricated by a planar process and
mounted in integrated circuit packages for use in high–current, fast–switching
core–driver applications. These arrays offer many of the advantages of integrated
circuits such as high–density packaging and improved reliability. These advantages
result from such factors as fewer glass–to–metal seals.
Designed for Use in Computers and Peripheral Equipment
Applications Include:
Magnetic Cores
Thin–Film Memories
Plated–Wire Memories
Decoding or Encoding Applications
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
Steady–State Reverse Voltage
Peak Forward Current 25°C
Continuous Forward Current
Power Dissipation
Derating Factor
Operating Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IF
PD
TA
Tstg
Value
50
50
500
400
500
4.0
– 65 to +150
– 65 to +150
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
°C
SO–14 PIN DIAGRAM
1
Dual 10 Diode Array
11 3
MMAD130
MMAD1103
MMAD1105
MMAD1107
MMAD1109
14
1
CASE 751A–03
SO–14
2
16 Diode Array
1
8 9 10 13 14 1 4 5 6 7
2 3 5 7 8 9 11 12
12 2
MMAD130
14
NC Pin 4, 6, 10, 13
MMAD1103
3
8 Diode Array
(Common Cathode)
14
2 3 5 7 8 9 11 12
NC Pin 1, 4, 6, 10, 13
MMAD1105
5
7 Diode Array
(Independent)
7654321
4
Dual 8 Diode Array
18
2 3 11 12 4 5 9 10
14
NC Pin 6, 13
MMAD1107
7
Thermal Clad is a trademark of the Bergquist Company
8 9 10 11 12 13 14
MMAD1109
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1

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MMAD1109 pdf, ピン配列
MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109
TEST PROCEDURE FOR MULTIPLE DIODES
1.0. REVERSE BIAS TESTING
1.1. LEAKAGE
Regardless of device configuration type, when testing any
reverse bias condition, the forcing power supply must be ap-
plied only to the uncommon terminal of the pair. As in Figure
1, this would be pins 1 and 14. This can be referred as the
high side of the test circuit. The low side of the test circuit
must be connected to the common terminal of the pair which
in most testers is where the current measurement is taken.
This method is used to eliminate the possibility of degrading
the diode in that pair which is not under test. Diode arrays
with multiple pairs such as the MMAD1103, also have leak-
age paths in the die between common terminals of the pairs.
To isolate the device under test so that the leakage from the
other pairs in the package do not affect the test result, the
leakage current from the common terminals of the pairs not
under test must be shunted to measurement common.
Figure 1 shows the test configuration for both of these cases.
VR
+
1
A 2 3 5 7 8 9 11 12
14
1
IF
2 3 5 7 8 9 11 12
Vmeas
14
1
IF
+ 2 3 5 7 8 9 11 12
Vmeas
14
Figure 2
2.1. KELVIN CONNECTION
To achieve the best possible accuracy when testing bias
currents over 10 mA, Kelvin connection to the leads of the
device under test is mandatory. True Kelvin connection dic-
tates that two test connections are made directly to the leads
of the device. One is for power which is the bias supply, and
the other is for sense which is for the measurement circuit.
Kelvin connections are used to eliminate the effects of the
connection resistance between the lead of the device and
the contacts of the test handler and/or hand fixture. Figure 3
is an example of Kelvin connection.
1
BIAS
A 2 3 5 7 8 9 11 12
VR
14
Figure 1
1.2. BREAKDOWN
It is not recommended to test breakdown on these devices
due to the possibility of degrading the device. Breakdown
may be checked on a curve tracer but extreme caution
should be used.
2.0. FORWARD BIAS TESTING
Diode arrays are designed with the pairs in parallel; there-
fore, care must be taken to prevent the other diodes in the
array from affecting the measured value of the diode under
test. Figure 2 illustrates the proper technique to measure
only the correct value of the diode under test.
TEST
HI
MEAS
TEST
LO
Figure 3
2.2. PULSE TESTING
When testing bias currents over 10 mA, pulse testing
should be used to minimize thermal drift of the measured val-
ue. The pulse width of a pulse test is approximately 300 µs to
380 µs.
3.0. TESTING PROTOCOL
3.1. TEST TYPES
When testing in sequence all of the electrical characteris-
tics, all reverse bias conditions should be tested before the
forward bias conditions are tested.
3.2. BIASING MAGNITUDES
Tests of the same test type should be grouped together
with the bias conditions in ascending order. For example:
VF @ 10 mA < 0.6 V
VF @ 50 mA < 0.8 V
VF @ 100 mA < 1 V
VF @ 500 mA < 1.5 V
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3


3Pages


MMAD1109 電子部品, 半導体
MMAD130 MMAD1103 MMAD1105 MMAD1107
MMAD1109
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
Mfax is a trademark of Motorola, Inc.
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315
Mfax: [email protected] – TOUCHTONE 602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
6 Motorola Small–Signal Transistors, FETs and Diodes DMevMicAeDD13a0t/aD

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共有リンク

Link :


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