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MMBV109LT1のメーカーはMotorola Semiconductorsです、この部品の機能は「Silicon Epicap Diodes」です。 |
部品番号 | MMBV109LT1 |
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部品説明 | Silicon Epicap Diodes | ||
メーカ | Motorola Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとMMBV109LT1ダウンロード(pdfファイル)リンクがあります。 Total 2 pages
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Epicap Diodes
Designed for general frequency control and tuning applications; providing
solid–state reliability in replacement of mechnaical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
31
Cathode
Anode
SC–70/SOT–323
31
Cathode
Anode
SOT–23
21
Cathode
Anode
TO–92
MAXIMUM RATINGS
Rating
Symbol MBV109T1 MMBV109LT1 MV209 Unit
Reverse Voltage
Forward Current
VR
IF
30 Vdc
200 mAdc
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
280
2.8
200 200 mW
2.0 1.6 mW/°C
Junction Temperature
Storage Temperature Range
TJ
Tstg
+125
–55 to +150
°C
°C
DEVICE MARKING
MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Reverse Breakdown Voltage (IR = 10 µAdc)
Reverse Voltage Leakage Current (VR = 25 Vdc)
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
V(BR)R
IR
TCC
Min
30
—
—
MMMBBVV110099TL1T1*
MV209*
* Motorola Preferred Devices
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 419–02, STYLE 3
SC–70/SOT–323
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
1
2
CASE 182–02, STYLE 1
TO–92 (TO–226AC)
Typ Max Unit
— — Vdc
— 0.1 µAdc
300 — ppm/°C
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz (Note 1)
Device
Min Nom Max
Min
Min Max
MBV109T1, MMBV109LT1, MV209
26
29
32
200
5.0 6.5
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.
MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMBV109LT1/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–91
1 Page | |||
ページ | 合計 : 2 ページ | ||
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PDF ダウンロード | [ MMBV109LT1 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MMBV109LT1 | Silicon Epicap Diodes | Motorola Semiconductors |
MMBV109LT1 | Silicon Epicap Diode | Leshan Radio Company |
MMBV109LT1 | Silicon Epicap Diodes | ON Semiconductor |